零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
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WATERPROOFD-SUBCONNECTOR | ASSMANN ASSMANN WSW COMPONENTS | ASSMANN | ||
HighAccuracy,LowPower,BarometricPressureandTemperatureSensorIC GENERALINFORMATION TheICP-10111pressuresensorfamilyisbasedonMEMS capacitivetechnologywhichprovidesultra-lownoiseatthe lowestpower,enablingindustryleadingrelativeaccuracy, sensorthroughput,andtemperaturestability.Thepressure sensorcanmeasurepressuredifferencesw | TDKTDK Corporation TDK株式會(huì)社東電化(中國(guó))投資有限公司 | TDK | ||
Dual3??nput/3??uputNORGate TheMC10111isdesignedtodriveuptothreetransmissionlinessimul?taneously.Themultipleoutputsofthisdevicealsoallowthewire“OR”?ingofseverallevelsofgatingforminimizationofgateandpackagecount. TheabilitytocontrolthreeparallellinesfromasinglepointmakestheMC10 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Dual3??nput/3??uputNORGate TheMC10111isdesignedtodriveuptothreetransmissionlinessimul?taneously.Themultipleoutputsofthisdevicealsoallowthewire“OR”?ingofseverallevelsofgatingforminimizationofgateandpackagecount. TheabilitytocontrolthreeparallellinesfromasinglepointmakestheMC10 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Dual3??nput/3??uputNORGate TheMC10111isdesignedtodriveuptothreetransmissionlinessimul?taneously.Themultipleoutputsofthisdevicealsoallowthewire“OR”?ingofseverallevelsofgatingforminimizationofgateandpackagecount. TheabilitytocontrolthreeparallellinesfromasinglepointmakestheMC10 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Dual3??nput/3??uputNORGate TheMC10111isdesignedtodriveuptothreetransmissionlinessimul?taneously.Themultipleoutputsofthisdevicealsoallowthewire“OR”?ingofseverallevelsofgatingforminimizationofgateandpackagecount. TheabilitytocontrolthreeparallellinesfromasinglepointmakestheMC10 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SMTPOWERINDUCTORS | pulse Pulse A Technitrol Company | pulse | ||
6Watts,1.5GHzGOLDMOSFieldEffectTransistor Description ThePTF10111isa6wattLDMOSFETintendedforlargesignalamplifierapplicationsto1.5GHz.Itoperates@50efficiencyand16dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. ?Performanceat1.5GHz,28Volts | EricssonEricsson Microelectronics 愛(ài)立信愛(ài)立信公司 | Ericsson | ||
Current-outputtypesensorswithvariableintegrationtimefunction Current-outputtypesensorswithvariableintegrationtimefunction TheS10111toS10114seriesareself-scanningphotodiodearraysdesignedspeci?callyasdetectorsforspectroscopy.Thescanningcircuitoperatesatlowpowerconsumptionandiseasytohandle.Eachphotodiodehasalargeact | HAMAMATSUHamamatsu Photonics Co.,Ltd. 濱松光子濱松光子學(xué)株式會(huì)社 | HAMAMATSU | ||
SAseries,high-precision,Pt-filmthermalsensors. | HUMIREL Humirel | HUMIREL | ||
ADAPTADORDEENCAPSULADOQFN48,MLF48,MLP48ADIP48PINES Descripción AdaptadorPlastronics,paraencapsuladosQFN48,MLF48,MLP48. | AGELECTRONICA AG Electronica | AGELECTRONICA | ||
14A,100VN-CHANNELMOSFET DESCRIPTION SVT10111NDisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilan'sLVMOStechnology. Theimprovedprocessandcellstructurehavebeenespecially tailoredtominimizeon-stateresistance,providesuperiorswitching performanceandwithsta | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
14A,100VN-CHANNELMOSFET DESCRIPTION SVT10111NDisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilan'sLVMOStechnology. Theimprovedprocessandcellstructurehavebeenespecially tailoredtominimizeon-stateresistance,providesuperiorswitching performanceandwithsta | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN |
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SB |
21+ |
DIP-16P |
134 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
SB |
22+ |
DIP-16P |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) | ||
SB |
7910+ |
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134 |
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23+ |
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134 |
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SILAN/士蘭微 |
22+ |
TO-252-2L |
150000 |
掛的就有,常備現(xiàn)貨 |
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IR |
0825 |
1 |
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1824+ |
NA |
16 |
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KEL |
24+ |
DIP-5 |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價(jià) | ||
POWERBRICK |
23+ |
原廠原裝 |
1087 |
全新原裝現(xiàn)貨 |
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POWERBRIC |
24+ |
2173 |
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