11AA02E64集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

11AA02E64屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的11AA02E64存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Features

Preprogrammed Globally Unique, 48-Bit or 64-Bit

Node Address

Compatible with EUI-48? and EUI-64?

Single I/O, UNI/O? Serial Interface Bus

Low-Power CMOS Technology:

- 1 mA active current, typical

- 1 μA standby current, maximum

256 x 8-Bit Organization

Schmitt Trigger Inputs for Noise Suppression

Output Slope Control to Eliminate Ground Bounce

100 kbps Maximum Bit Rate – Equivalent to

100 kHz Clock Frequency

Self-Timed Write Cycle (including Auto-Erase)

Page-Write Buffer for up to 16 Bytes

STATUS Register for Added Control:

- Write Enable Latch bit

- Write-In-Progress bit

Block Write Protection:

- Protect none, 1/4, 1/2 or all of array

Built-in Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

High Reliability:

- Endurance: 1,000,000 erase/write cycles

- Data retention: >200 years

- ESD protection: >4,000V

3-Lead SOT-23 and 8-Lead SOIC Packages

Pb-Free and RoHS Compliant

Available Temperature Ranges:

- Industrial (I): -40°C to +85°C