11N65FJHD2中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

SVS11N65FJHD2 is an N-channel enhancement mode high voltage

power MOSFETs produced using Silan’s Super Junction MOS

technology. It achieves low conduction loss and switching losses. It

leads the design engineers to their power converters with high

efficiency, high power density, and superior thermal behavior.

Furthermore, it’s universal applicable, for example. it is suitable for

hard and soft switching topologies.

FEATURES

? 11A,650V, RDS(on)(typ.)=0.33?@VGS=10V

? New revolutionary high voltage technology

? Ultra low gate charge

? Periodic avalanche rated

? Extreme dv/dt rated

? High peak current capability