零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS??Power-MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintend | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
4.5VDriveNchMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
4VDriveNchMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Switching(30V,13A) ●Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). ●Application Powerswitching,DC/DCconverter. ●Structure SiliconN-channel MOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Nch30V13APowerMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Nch30V13APowerMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
QFN |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
QFN |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
QFN8 |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
QFN |
20000 |
原裝正品 歡迎咨詢 |
詢價(jià) | ||
INFINEON/英飛凌 |
22+ |
QFN |
2000 |
原廠原包裝。假一罰十??砷_13%增值稅發(fā)票。 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
NA/ |
3425 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
17 |
23+ |
DFN-83.3X3.3 |
6000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
17 |
23+ |
DFN-83.3X3.3 |
6000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
QFN |
7000 |
詢價(jià) | |||
17 |
24+ |
DFN-83.3X3.3 |
3750 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) |
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