MM3Z4V3

Marking：1K；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.200mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

MT6L68FS

Marking：1K；Package：fS6；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NJU77240F

Marking：1K；Package：SOT-23-5；Excellent EMI Immunity Rail-to-Rail Input, Open-Drain Output Low power CMOS Comparators

■FEATURES(V+=3V,V-=0V,Ta=25°C) ●Rail-to-RailInput ●Open-DrainOutput ●SupplyCurrent6μA/chtyp. ●PropagationDelay840nstyp. ●OperatingVoltage1.8to5.5V ●InputOffsetVoltage6mVmax. ●OperatingTemperature-40to125°C ●IntegratedEMIfilterEMIRR=62dBtyp.@f=900MHz ●Package

PBSS5520X

Marking：1K；Package：SC-62；20 V, 5 A PNP low VCEsat (BISS) transistor

FEATURES ?HighhFEandlowVCEsatathighcurrentoperation ?HighcollectorcurrentIC:5A ?Highefficiencyleadingtolessheatgeneration. APPLICATIONS ?Mediumpowerperipheraldrivers(e.g.fansandmotors) ?Strobeflashunitsfordigitalstillcamerasandmobilephones ?Powerswitch

PESD5V0V1BA

Marking：1K；Package：SOD323；Very low capacitance bidirectional ESD protection diode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmall SOD323(SC-76)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits

PESD5V0V1BA

Marking：1K；Package：SOD323；Very low capacitance bidirectional ESD protection diodes

1.1Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodesin smallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 1.2Featuresandbenefits 1.3Applications

PESD5V0V1BA

Marking：1K；Package：SOD-323；Bidirectional ESD protection of one line

Features Applications BidirectionalESDprotectionofoneline ESDprotectionupto30kV Verylowdiodecapacitance:Cd=11pF IEC61000-4-2;level4(ESD) Max.peakpulsepower:PPP=45W IEC61000-4-5(surge);IPP=4.8A Lowclampingvoltage:VCL=12.5V AEC-Q101qualified Ultral

PESD5V0V1BA

Marking：1K；Package：SOD-323；Microprocessor based equipment

Features Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)17A(8/20μs) Applications Microprocessorbasedequipment PersonalDigit

PESD5V0V1BA-Q

Marking：1K；Package：SOD323；Very low capacitance bidirectional ESD protection diode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmall SOD323(SC-76)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefit

PMBT6428

Marking：1K；Package：SOT23；NPN general purpose transistors

FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.50V). APPLICATIONS ?Generalpurposeswitchingandamplification ?Telephonyandprofessionalcommunicationequipment. DESCRIPTION NPNtransistorinaSOT23plasticpackage.