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1N2999RB

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2999RB

包裝:散裝 封裝/外殼:DO-203AA,DO-4,接線柱 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 齊納 - 單 描述:DIODE ZENER 56V 10W DO213AA

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

1N2999RC

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2999RD

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999A

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999B

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999C

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999D

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999R

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RA

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RB

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RC

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RD

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999A

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999B

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999C

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999D

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999R

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    1N2999RB

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 齊納 - 單

  • 包裝:

    散裝

  • 容差:

    ±5%

  • 工作溫度:

    -65°C ~ 175°C

  • 安裝類型:

    底座,接線柱安裝

  • 封裝/外殼:

    DO-203AA,DO-4,接線柱

  • 供應(yīng)商器件封裝:

    DO-213AA

  • 描述:

    DIODE ZENER 56V 10W DO213AA

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
MICROSEMI
專業(yè)模塊
MODULE
8513
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詢價(jià)
MICROSEMI
2023+
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
MSC
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
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Microsemi
1942+
N/A
908
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MICROSEMI
1809+
DO-213
96
就找我吧!--邀您體驗(yàn)愉快問購元件!
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Microchip
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
24+
N/A
47000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
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SPERRY
1
全新原裝 貨期兩周
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CHINA
22+
C1-01A
640
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詢價(jià)
松下ELJ-RF1N5DFB ELJRF1N5DFB
+
ELJRF1N8ZFB
180000
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更多1N2999RB供應(yīng)商 更新時(shí)間2025-1-1 14:14:00