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1N3645分立半導(dǎo)體產(chǎn)品的二極管-整流器-單規(guī)格書(shū)PDF中文資料

1N3645
廠商型號(hào)

1N3645

參數(shù)屬性

1N3645 封裝/外殼為軸向;包裝為散裝;類別為分立半導(dǎo)體產(chǎn)品的二極管-整流器-單;產(chǎn)品描述:DIODE GEN PURP 2KV 600MA AXIAL

功能描述

HIGH VOLTAGE RECTIFIERS

文件大小

44.82 Kbytes

頁(yè)面數(shù)量

2 頁(yè)

生產(chǎn)廠商 Microsemi Corporation
企業(yè)簡(jiǎn)稱

Microsemi美高森美

中文名稱

美高森美公司官網(wǎng)

原廠標(biāo)識(shí)
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更新時(shí)間

2024-12-29 19:18:00

1N3645規(guī)格書(shū)詳情

DESCRIPTION

These “standard recovery” high voltage rectifier diode series are military qualified to MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru 1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for high-reliability where a failure cannot be tolerated for high voltage applications.

FEATURES

? JEDEC registered 1N3643 thru 1N3647, 1N4254 thru 1N4257, and 1N5181 thru 1N5187 series

? Voidless Hermetically Sealed Glass Package

? Triple Layer Passivation

? Internal “Category I” Metallurgical bonds

? Lowest Reverse Leakage Available

? Lowest Thermal Resistance Available

? Absolute High Voltage / High Temperature Stability

? 1N5181 thru 1N5184 meet or exceed requirements of MIL-S-19500/389

? 1N3644 thru 1N3647 JAN, JANTX types available per MIL-S19500/279

? Surface mount equivalents also available in a square end-cap MELF configuration with “SM” suffix

APPLICATIONS / BENEFITS

? High voltage standard recovery rectifiers 1000 to 10,000 V

? Military and other high-reliability applications

? Applications include bridges, half-bridges, catch diodes, voltage multipliers, X-ray machines, power supplies, transmitters, and radar equipment

? High forward surge current capability

? Extremely robust construction

? Low thermal resistance

? Inherently radiation hard as described in Microsemi MicroNote 050

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    1N3645

  • 制造商:

    Semtech Corporation

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝:

    散裝

  • 二極管類型:

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io):

    600mA

  • 速度:

    標(biāo)準(zhǔn)恢復(fù) >500ns,> 200mA(Io)

  • 不同?Vr、F 時(shí)電容:

    8pF @ 5V,1MHz

  • 安裝類型:

    通孔

  • 封裝/外殼:

    軸向

  • 供應(yīng)商器件封裝:

    軸向

  • 工作溫度 - 結(jié):

    -65°C ~ 175°C

  • 描述:

    DIODE GEN PURP 2KV 600MA AXIAL

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