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1N5181分立半導(dǎo)體產(chǎn)品的二極管-整流器-單規(guī)格書PDF中文資料

1N5181
廠商型號

1N5181

參數(shù)屬性

1N5181 封裝/外殼為S,軸向;包裝為散裝;類別為分立半導(dǎo)體產(chǎn)品的二極管-整流器-單;產(chǎn)品描述:DIODE GEN PURP 4KV 100MA AXIAL

功能描述

HIGH VOLTAGE RECTIFIERS

文件大小

44.82 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 Microsemi Corporation
企業(yè)簡稱

Microsemi美高森美

中文名稱

美高森美公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-28 16:20:00

1N5181規(guī)格書詳情

DESCRIPTION

These “standard recovery” high voltage rectifier diode series are military qualified to MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru 1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for high-reliability where a failure cannot be tolerated for high voltage applications.

FEATURES

? JEDEC registered 1N3643 thru 1N3647, 1N4254 thru 1N4257, and 1N5181 thru 1N5187 series

? Voidless Hermetically Sealed Glass Package

? Triple Layer Passivation

? Internal “Category I” Metallurgical bonds

? Lowest Reverse Leakage Available

? Lowest Thermal Resistance Available

? Absolute High Voltage / High Temperature Stability

? 1N5181 thru 1N5184 meet or exceed requirements of MIL-S-19500/389

? 1N3644 thru 1N3647 JAN, JANTX types available per MIL-S19500/279

? Surface mount equivalents also available in a square end-cap MELF configuration with “SM” suffix

APPLICATIONS / BENEFITS

? High voltage standard recovery rectifiers 1000 to 10,000 V

? Military and other high-reliability applications

? Applications include bridges, half-bridges, catch diodes, voltage multipliers, X-ray machines, power supplies, transmitters, and radar equipment

? High forward surge current capability

? Extremely robust construction

? Low thermal resistance

? Inherently radiation hard as described in Microsemi MicroNote 050

產(chǎn)品屬性

  • 產(chǎn)品編號:

    1N5181

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝:

    散裝

  • 二極管類型:

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io):

    100mA

  • 速度:

    小信號 =< 200mA(Io),任意速度

  • 安裝類型:

    通孔

  • 封裝/外殼:

    S,軸向

  • 供應(yīng)商器件封裝:

    S,軸向

  • 工作溫度 - 結(jié):

    -65°C ~ 175°C

  • 描述:

    DIODE GEN PURP 4KV 100MA AXIAL

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