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1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES Metal-to-siliconjunction andpulseapplicationswithbroaddynamicrange Highbreakdownvoltage Lowturn-onvoltage Ultrafastswitchingspeed PrmarlyintendedforhighlevelUHF/VHFdetection

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽(yáng)電子三陽(yáng)電子有限公司

1N5712

SMALLSINGALSCHOTTKYDIODES

FEATURES ?Metal-on-siliconjunction ?Highbreakdownvoltage ?Lowturn-onvoltage ?Ultrafastswitchingspeed ?PrimarilyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange ?ThediodeisalsoavailableintheMiniMELFcasewithtypedesignationLL5

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合明輝電子山東星合明輝電子有限公司

1N5712

GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes

DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso

MA-COM

M/A-COM Technology Solutions, Inc.

1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES ?Metal-on-siliconjunction ?Highbreakdownvoltage ?Lowturn-onvoltage ?Ultrafastswitchingspeed ?PrimarilyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange ?ThediodeisalsoavailableintheMiniMELFcasewithtypedesignationLL5

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

1N5712

SMALLSIGNALSCHOTTKYDIODES

SMALLSIGNALSCHOTTKYDIODES FEATURES ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

KISEMICONDUCTORKwang Myoung I.S. CO.,LTD

明陽(yáng)國(guó)際貿(mào)易廣州市明陽(yáng)國(guó)際貿(mào)易有限公司

1N5712

SmallSignalSchottkyDiodes

Features ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1N5712

SMALLSIGNALSCHOTTKYDIODES

FEATURES ◇Metal-to-siliconjunction ◇Highbreakdownvoltage ◇Lowturn-onvoltage ◇Ultrafastswitchingspeed ◇PrmarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationswithbroaddynamicrange

DSK

Diode Semiconductor Korea

1N5712

PicoSecondSwitchingSpeed

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

1N5712

SMALLSIGNALSCHOTTKYDIODES

Features ●Metal-to-siliconjunction ●Highbreakdownvoltage ●Lowturn-onvoltage ●Ultrafastswitchingspeed

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

1N5712

SCHOTTKYDIODES

SCHOTTKYDIODES ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.

DIGITRON

Digitron Semiconductors

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MICROCHIP
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7300
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Microsemi
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Microchip Technology
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更多1N5712UBDJAN供應(yīng)商 更新時(shí)間2025-1-28 15:00:00