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1N5817-B

1.0A SCHOTTKY BARRIER RECTIFIER

DIODES

Diodes Incorporated

1N5817-B

Guard Ring Die Construction for Transient Protection

DIODES

Diodes Incorporated

1N5817-B

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：DO-204AL，DO-41，軸向 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 20V 1A DO41

PAM

Diodes Incorporated

1N5817-E

SchottkyBarrierRectifiersReverseVoltage20to40VForwardCurrent1.0A

Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardingforovervoltageprotection *Hightempera

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

1N5817FL

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導體東莞市平晶半導體科技有限公司

1N5817G

1AmpSchottkyRectifier

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5817G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5817G

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5817-G

SchottkyBarrierRectifiers

Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5817GI

FIXEDNEGATIVE5-V200-mAINVERTINGDC/DCCONVERTER

TI1Texas Instruments

德州儀器

1N5817H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequencyinverters,f

PANJITPan Jit International Inc.

強茂股份有限公司

1N5817HS

SurfaceMountSchottkyBarrierRectifier

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導體東莞市平晶半導體科技有限公司

1N5817L

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

FORMOSAFormosa MS

美麗微半導體美麗微半導體股份有限公司

1N5817L

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5817-LFR

1ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE

FRONTIER

Frontier Electronics

1N5817M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications

DIODES

Diodes Incorporated

1N5817M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5817PT

VOLTAGERANGE20-40VoltsCURRENT1.0Ampere

CHENMKOchenmko

力勤股份有限公司

1N5817RL

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

1N5817RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    1N5817-B

  • 制造商：

    Diodes Incorporated

  • 類別：

    分立半導體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 二極管類型：

    肖特基

  • 電流 - 平均整流 (Io)：

    1A

  • 速度：

    快速恢復 =< 500ns，> 200mA（Io）

  • 不同?Vr、F 時電容：

    110pF @ 4V，1MHz

  • 安裝類型：

    通孔

  • 封裝/外殼：

    DO-204AL，DO-41，軸向

  • 供應商器件封裝：

    DO-41

  • 工作溫度 - 結(jié)：

    -65°C ~ 125°C

  • 描述：

    DIODE SCHOTTKY 20V 1A DO41

供應商型號品牌批號封裝庫存備注價格
DIODES/美臺
22+
DO41
90000
正規(guī)代理渠道假一賠十
 詢價
DIODES/美臺
2021+
DO41
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
DIODES
1809+
DO-41
6675
就找我吧!--邀您體驗愉快問購元件!
 詢價
DIODES/美臺
23+
DO41
6000
原裝正品假一罰百!可開增票!
 詢價
DIODES/美臺
23+
DO-41
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
DIODES
22+
NA
2209
加我QQ或微信咨詢更多詳細信息,
 詢價
DIODES/美臺
22+
DO41
30000
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
DIODES/美臺
2023+
DO41
48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
DIODES/美臺
23+
NA/
4000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
DIODES/美臺
23+
DO-41
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多1N5817-B供應商 更新時間2024-12-23 16:20:00

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