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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
1N5818-E	文件：182.91 Kbytes Page：7 Pages	Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 1.0A Feature&Dimensions PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 Lowpowerloss,highefficiency Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications Guardingforovervoltageprotection *Hightempera	LRCLeshan Radio Company 樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司	LRC
1N5818-E3/53	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：DO-204AL，DO-41，軸向類別：分立半導(dǎo)體產(chǎn)品二極管 - 整流器 - 單描述：DIODE SCHOTTKY 30V 1A DO204AL	Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division
1N5818-E3/54	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）剪切帶（CT）封裝/外殼：DO-204AL，DO-41，軸向類別：分立半導(dǎo)體產(chǎn)品二極管 - 整流器 - 單描述：DIODE SCHOTTKY 30V 1A DO204AL	Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division
1N5818-E3/73	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：DO-204AL，DO-41，軸向類別：分立半導(dǎo)體產(chǎn)品二極管 - 整流器 - 單描述：DIODE SCHOTTKY 30V 1A DO204AL	Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division
1N5818FL	文件：545.53 Kbytes Page：3 Pages	SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS	PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司	PJSEMI
1N5818G	文件：116.38 Kbytes Page：3 Pages	1AmpSchottkyRectifier 1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5818G	文件：75.98 Kbytes Page：7 Pages	AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
1N5818G	文件：249.43 Kbytes Page：9 Pages	AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
1N5818H	文件：51.96 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequencyinverters,f	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
1N5818HS	文件：560.56 Kbytes Page：3 Pages	SurfaceMountSchottkyBarrierRectifier	PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司	PJSEMI
1N5818L	文件：152.37 Kbytes Page：2 Pages	1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability *Epitaxialconstruction	BYTES Bytes	BYTES
1N5818-LFR	文件：120.94 Kbytes Page：2 Pages	1ASCHOTTKYBARRIERRECTIFIERS FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE	FRONTIER Frontier Electronics	FRONTIER
1N5818M	文件：59.09 Kbytes Page：2 Pages	1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications	DIODES Diodes Incorporated	DIODES
1N5818M	文件：58.05 Kbytes Page：2 Pages	1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER	DIODES Diodes Incorporated	DIODES
1N5818RL	文件：75.98 Kbytes Page：7 Pages	AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
1N5818RL	文件：61.24 Kbytes Page：5 Pages	LOWDROPPOWERSCHOTTKYRECTIFIER DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
1N5818RL	文件：249.43 Kbytes Page：9 Pages	AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
1N5818RLG	文件：75.98 Kbytes Page：7 Pages	AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
1N5818RLG	文件：249.43 Kbytes Page：9 Pages	AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
1N5818S	文件：583.81 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER	CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司	CHENDA

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詳細(xì)參數(shù)

型號(hào)：
1N5818-E
功能描述：
肖特基二極管與整流器 30 Volt 1.0 Amp 25 Amp IFSM
RoHS：
否
制造商：
Skyworks Solutions, Inc.
產(chǎn)品：
Schottky Diodes
峰值反向電壓：
2 V
正向連續(xù)電流：
50 mA
配置：
Crossover Quad
正向電壓下降：
370 mV
最大功率耗散：
75 mW
工作溫度范圍：
- 65 C to + 150 C
安裝風(fēng)格：
SMD/SMT
封裝/箱體：
SOT-143
封裝：
Reel

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	1N5818-E3/54	Vishay/GeneralSemiconduc	24+	DO-41	7500		詢價(jià)
深圳市博浩通科技有限公司	1N5818-E3/54	VISHAY	23+	DO-41(DO-204AL)	6680	全新原裝優(yōu)勢(shì)	詢價(jià)
深圳市達(dá)恩科技有限公司	1N5818-E3/54	Vishay	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)
上海市鑫鴻達(dá)電子	1N5818-E3/54	General Semiconductor / Vishay	2022+		5275	全新原裝貨期兩周	詢價(jià)
艾睿國(guó)際（香港）有限公司	1N5818-E3/54	VI1	2021+	SMD	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	1N5818-E3/54	VISHAY	21+		5500	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市科雨電子有限公司	1N5818-E3/73	VISHAY	1809+	DO-204	16750	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市凌旭科技有限公司	1N5818-E3/54	GENERALSEMICONDUCTORVISHAY	21+	NA	5500	只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	1N5818-E3/54	VISHAY/威世	23+	DO41	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	1N5818-E3/54	VISHAY	23+		50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)

更多1N5818-E供應(yīng)商更新時(shí)間2024-12-25 10:50:00

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