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1N5819-E

SchottkyBarrierRectifiersReverseVoltage20to40VForwardCurrent1.0A

Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardingforovervoltageprotection *Hightempera

LRCLeshan Radio Company

樂山無(wú)線電樂山無(wú)線電股份有限公司

1N5819FL

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

1N5819-FP

AxialLeadSchottkyDiode

MA-COM

M/A-COM Technology Solutions, Inc.

1N5819G

1AmpSchottkyRectifier

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5819G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819G

Schottkybarrierdiode

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

1N5819G

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequencyinverters,f

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

1N5819HS

SurfaceMountSchottkyBarrierRectifier

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

1N5819HW

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ?GuardRingDieConstructionforTransientProtection ?LowPowerLoss,HighEfficiency ?HighSurgeCapability ?HighCurrentCapabilityandLowForwardVoltageDrop ?ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplication ?Lead,Hal

DIODES

Diodes Incorporated

1N5819HW

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5819HW

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DescriptionandApplications ThedeviceisasinglerectifierofferinglowVFandexcellenthightemperaturestability.Thisdeviceisidealforuseingeneralrectificationapplications: ?ForUseinLowVoltage,HighFrequencyInverters ?FreeWheeling ?PolarityProtectionApplication Feat

DIODES

Diodes Incorporated

1N5819HW

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5819HW

1.0ASURFACE-MOUNTSCHOTTKYBARRIERRECTIFIER

FeaturesandBenefits ?HighSurgeCapability ?LowPowerLoss,HighEfficiency ?HighCurrentCapabilityandLowForwardVoltageDrop ?GuardRingDieConstructionforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(

DIODES

Diodes Incorporated

1N5819HW-FDICT-ND

LAUNCHXL-F28379DOverview

TITexas Instruments

德州儀器美國(guó)德州儀器公司

1N5819HWQ

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ?HighSurgeCapability ?LowPowerLoss,HighEfficiency ?HighCurrentCapabilityandLowForwardVoltageDrop ?GuardRingDieConstructionforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qu

DIODES

Diodes Incorporated

1N5819HWQ

1.0ASURFACE-MOUNTSCHOTTKYBARRIERRECTIFIER

FeaturesandBenefits ?HighSurgeCapability ?LowPowerLoss,HighEfficiency ?HighCurrentCapabilityandLowForwardVoltageDrop ?GuardRingDieConstructionforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(

DIODES

Diodes Incorporated

1N5819L

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5819-LFR

1ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE

FRONTIER

Frontier Electronics

1N5819M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

詳細(xì)參數(shù)

  • 型號(hào)：

    1N5819-CUT TAPE

  • 制造商：

    Fairchild

  • 功能描述：

    1N58 Series 600 mV 1 A 40 V Max Reverse Voltage Schottky Barrier Rectifier-DO-41

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY/威世
wrockhoundingnet/projects/comp
resources smd pdf digikey243 p
1000
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DIODES
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50000
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DIODES
DIP
1800
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MIC
19+
SMA
16200
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xilinx
22+
SMA
6800
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xilinx
23+
SMA
8000
全新原裝
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TOSHIBA/GC
23+
SOD123LF
50000
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TOSHIBA/GC
2022
SOD123LF
80000
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TOSHIBA/GC
23+
NA/
6250
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VIS
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11000
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更多1N5819-CUT TAPE供應(yīng)商 更新時(shí)間2025-1-12 10:26:00

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