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1N5819HWQ

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ?HighSurgeCapability ?LowPowerLoss,HighEfficiency ?HighCurrentCapabilityandLowForwardVoltageDrop ?GuardRingDieConstructionforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qu

DIODES

Diodes Incorporated

1N5819HWQ

1.0ASURFACE-MOUNTSCHOTTKYBARRIERRECTIFIER

FeaturesandBenefits ?HighSurgeCapability ?LowPowerLoss,HighEfficiency ?HighCurrentCapabilityandLowForwardVoltageDrop ?GuardRingDieConstructionforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(

DIODES

Diodes Incorporated

1N5819L

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5819-LFR

1ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE

FRONTIER

Frontier Electronics

1N5819M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5819M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications

DIODES

Diodes Incorporated

1N5819PT

VOLTAGERANGE20-40VoltsCURRENT1.0Ampere

CHENMKOchenmko

力勤股份有限公司

1N5819-R

AxialLeadSchottkyDiode

MA-COM

M/A-COM Technology Solutions, Inc.

1N5819RL

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

1N5819RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5819RL

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5819RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5819RLG

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli

DSK

Diode Semiconductor Korea

1N5819S

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實業(yè)重慶平偉實業(yè)股份有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

HORNBYNantong Hornby Electronic Co.,Ltd

南通康比電子南通康比電子有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達半導體深圳辰達半導體有限公司

供應商型號品牌批號封裝庫存備注價格
24+
N/A
56000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
DIODES/美臺
23+
SOD-123
7600
專注配單,只做原裝進口現(xiàn)貨
 詢價
DIODES/美臺
23+
SOD-123
7600
專注配單,只做原裝進口現(xiàn)貨
 詢價
DIODES/美臺
20+
SMD
88800
DIODES原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
Diodes(美臺)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
 詢價
DIODES/美臺
21+
SOD-123
10000
原裝,品質(zhì)保證,請來電咨詢
 詢價
DIODES/美臺
21+
SOD-123
10000
原裝,品質(zhì)保證,請來電咨詢
 詢價
DIODES/美臺
23+
NA
6000
原裝正品假一罰百!可開增票!
 詢價
DIODES/美臺
23+
SOD-123
25000
原裝正品公司現(xiàn)貨,假一賠十!
 詢價
DIODES/美臺
2023+
SOD-123
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
更多1N5819HW-MS供應商 更新時間2025-1-18 11:06:00

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