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零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

1N5821-B

3.0A SCHOTTKY BARRIER RECTIFIERS

DIODES

Diodes Incorporated

1N5821-B

3.0A SCHOTTKY BARRIER RECTIFIERS

DIODES

Diodes Incorporated

1N5821-B

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：DO-201AD，軸向 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 30V 3A DO201AD

PAM

Diodes Incorporated

1N5821-BP

3 Amp Schottky Barrier Rectifier 20 - 40 Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5821G

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5821G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5821-G

SchottkyBarrierRectifier

ForwardCurrent:3.0AReverseVoltage:20to40V RoHSDevice Features -Fastswitching. -Lowforwardvoltage,highcurrentcapability. -Lowpowerloss,highefficiency. -Highcurrentsurgecapability. -Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlengtha

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5821H

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes FEATURES *Halogen-freetype *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency,Highsurgecapability *Highcurrentcapability,lowfo

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

1N5821H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequenc

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

1N5821-LFR

3ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE

FRONTIER

Frontier Electronics

1N5821M

SchottkyBarrierRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

1N5821RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5821RL

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5821RLG

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5821RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5821S

SCHOTTKYBARRIERRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5821-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5821-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5821-TB

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5821-TB

3.0ASCHOTTKYBARRIERDIODE

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    1N5821-B

  • 制造商：

    Diodes Incorporated

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 二極管類型：

    肖特基

  • 電流 - 平均整流 (Io)：

    3A

  • 速度：

    快速恢復(fù) =< 500ns，> 200mA（Io）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    DO-201AD，軸向

  • 供應(yīng)商器件封裝：

    DO-201AD

  • 工作溫度 - 結(jié)：

    -65°C ~ 150°C

  • 描述：

    DIODE SCHOTTKY 30V 3A DO201AD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
DIODES
22+
NA
12080
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Diodes Incorporated
24+
DO-201AD
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
TAIWAN
1809+
DO-201
6675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
Vishay/GeneralSemiconduc
24+
DO-201ADAxial
7500
詢價(jià)
VISHAY
23+
DO-201AD
6680
全新原裝優(yōu)勢(shì)
 詢價(jià)
Vishay
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
General Semiconductor / Vishay
2022+
1
全新原裝 貨期兩周
 詢價(jià)
VISHAY/威世
2021+
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
VISHAY/威世
21+
DO-201AC
12020
原裝現(xiàn)貨假一賠十
 詢價(jià)
VISHAY/威世
23+
DO-201AC
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多1N5821-B供應(yīng)商 更新時(shí)間2025-1-9 10:08:00

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