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1N5822-G

Schottky Barrier Rectifier

ForwardCurrent:3.0AReverseVoltage:20to40V RoHSDevice Features -Fastswitching. -Lowforwardvoltage,highcurrentcapability. -Lowpowerloss,highefficiency. -Highcurrentsurgecapability. -Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlengtha

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5822H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequenc

PANJITPan Jit International Inc.

強茂股份有限公司

1N5822H

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes FEATURES *Halogen-freetype *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency,Highsurgecapability *Highcurrentcapability,lowfo

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

1N5822-LFR

3ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE

FRONTIER

Frontier Electronics

1N5822M

SchottkyBarrierRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

1N5822PT

VOLTAGERANGE20-40VoltsCURRENT3.0Amperes

CHENMKOchenmko

力勤股份有限公司

1N5822RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5822RL

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5822RLG

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5822RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

1N5822S

SCHOTTKYBARRIERRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-TB

3.0ASCHOTTKYBARRIERDIODE

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5822-TB

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5822-TP

3AmpSchottkyBarrierRectifier20-40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

1N5822U

Aerospace40VpowerSchottkyrectifier

Description ThispowerSchottkyrectifierisdesignedandpackagedtocomplywiththeESCC5000specificationforaerospaceproducts.ItishousedinasurfacemounthermeticallysealedLCC2Bpackagewhosefootprintis100compatiblewithindustrystandardsolutionsinD5B. The1N5822Uissuitabl

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

1N5822US

3AmpSQ-MELFSchottkyBarrierRectifiers

DESCRIPTION Thisseriesof3ampSchottkyrectifiersarecompactintheirsquareMELFpackagingforhighdensitymounting.The1N5822USand1N6864USaremilitaryqualifiedforhigh-reliabilityapplications. FEATURES ?JEDECregisteredsurfacemountequivalentsof1N5820–1N5822and1N6864nu

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5822US

3AMPSCHOTTKYBARRIERRECTIFIERS

?1N5822USAVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/620 ?3AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?LEADLESSPACKAGEFORSURFACEMOUNT ?METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5822US

3AMPSCHOTTKYBARRIERRECTIFIERS

?1N5822USAVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/620 ?3AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?LEADLESSPACKAGEFORSURFACEMOUNT ?METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

供應商型號品牌批號封裝庫存備注價格
ON/安森美
23+
DO-27
50000
全新原裝正品現貨,支持訂貨
 詢價
ON/安森美
2022
DO-27
80000
原裝現貨,OEM渠道,歡迎咨詢
 詢價
ON/安森美
2122+
DO-201AD
60000
全新原裝正品現貨,假一賠十
 詢價
24+
N/A
56000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
Taiwan Semiconductor Corporati
24+
DO-201AD
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
TAIWAN
1809+
DO-201
6675
就找我吧!--邀您體驗愉快問購元件!
 詢價
MICROCHIP
23+
7300
專注配單,只做原裝進口現貨
 詢價
MICROCHIP
23+
7300
專注配單,只做原裝進口現貨
 詢價
MSCI
24+
SMD
100
“芯達集團”專營軍工百分之百原裝進口
 詢價
MSC
三年內
1983
只做原裝正品
 詢價
更多1N5822-G供應商 更新時間2025-1-5 11:00:00

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