1N5907TR中文資料美高森美數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

This pair of unidirectional low voltage Transient Voltage Suppressor (TVS) devices for the 1N5907 and 1N5908 JEDEC registrations with different packages have the same high Peak Pulse Power rating of 1500 W with extremely fast response times. The 1N5907 is available in a military qualified version as described in the Features section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in surge levels of IEC61000-4-5 described herein. They are also very successful in protecting airborne avionics and electrical systems when low voltage is required. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. Both hermetic seal and molded types are available.

FEATURES

? Unidirectional TVS series for thru-hole mounting

? Suppresses transients up to 1500 watts @ 10/1000 μs (Figure 1) in less than 100 pico seconds

? Low working voltage (VWM) of 5 V

? Hermetic sealed DO-13 metal package for 1N5907 and plastic “Case 1” for 1N5908

? JAN/TX/TXV military qualification available for 1N5907 per MILPRF-19500/500 by adding JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N5907

? Surface mount equivalent packages also available as SMCJ5.0 or SMCG5.0 in separate data sheet (consult factory for other surface mount options)

APPLICATIONS / BENEFITS

? Protection from switching transients and induced RF

? Protects TTL, ECL, DTL, MOS, MSI, and other integrated circuits requiring 5.0 V or lower power supplies

? Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4

? Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1 thru 4

? Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: Class 1 thru 4

? Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance: Class 2 & 3

? 1N5907 Inherently radiation hard as described in Microsemi MicroNote 050