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1N60

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ?Metal-on-siliconjunction,majoritycarrierconduction ?Highcurrentcapability,Lowforwardvoltagedrop ?ExtremelylowreversecurrentIR ?Ultraspeedswitchingcharacteristics ?Smalltemperaturecoefficientofforwardcharacteristics ?Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司

1N60

SMALL SIGNAL SCHOTTKY DIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N60

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

1N60

Schottky Barrier Rectifier

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) ?MoistureSensitivityLevel1 MaximumRatings ?Storage&

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N60

Low forward voltage drop - low power consumption

FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N60

N-CHANNEL MOSFET

DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

1N60

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

1N60

N-Channel Power MOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell1N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof1.2A,fastswitc

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

1N60

Small Signal Schottky Diodes

VOLTAGERANGE:40V CURRENT:0.03A DO-35(GLASS) FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforward

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1N60

Fast Switching

?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent–ID=1A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequireme

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    1N60

  • 制造商：

    JINANJINGHENG

  • 制造商全稱：

    Jinan Jingheng(Group) Co.,Ltd

  • 功能描述：

    SMALL SIGNAL SCHOTTKY DIODES

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FQP
24+
TO220F
6580
原裝現(xiàn)貨!
 詢價(jià)
0
1101
100
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
MSV
17+
TO252251
5739
大量庫存
 詢價(jià)
13+14+
TO92
50000
全新原裝
 詢價(jià)
TOSHIBA
2022
LL-34 / SOD-80
1600
全新原裝,房間現(xiàn)貨
 詢價(jià)
SEMITEH
2023+
SOD80
15000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
2000
50
詢價(jià)
德愛
2410+
TO-251
32100
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價(jià)
HJ
11+
TO-92/TO251
21000
詢價(jià)
FH
24+/25+
TO-92
80
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
更多1N60供應(yīng)商 更新時(shí)間2025-4-15 13:36:00

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