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1N60L-TMS-T

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60L-TND-R

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

1N60P

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRON

Weitron Technology

1N60P

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60P

SMALLSIGNALSCHOTTKYDIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

1N60P

POINTCONTACTGERMANIUMDIODES

POINTCONTACTGERMANIUMDIODES 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

FEATURES ?Metal-on-siliconjunction,majoritycarrierconduction ?Highcurrentcapability,Lowforwardvoltagedrop ?ExtremelylowreversecurrentIR ?Ultraspeedswitchingcharacteristics ?Smalltemperaturecoefficientofforwardcharacteristics ?Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司

1N60P

SchottkyBarrierRectifier

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?MoistureSensitivity:Level1perJ-STD-020C MaximumRatings ?Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60P

SchottkyBarrierRectifier

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) ?MoistureSensitivityLevel1 MaximumRatings ?Storage&

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N60P

POINTCONTACTGERMANIUMDIODE

PointContactGermaniumDiodes 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECH

Semtech Corporation

1N60P

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

1N60P

TECHNICALSPECIFICATIONSOFSMALLSIGNALSCHOTTKYDIODES

FEATURES *Metalsiliconjunction,majoritycarrierconduction. *Highcurrentcapability,lowforwardvoltagedrop. *ExtremelylowreversecurrentIR *Ultraspeedswitchingcharacteristics *Smalltemperaturecoefficientofforwardcharacteristics *SatisfactoryWavedetectionefficiency

DCCOM

Dc Components

1N60P

40VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者：深圳市福田區(qū)吉富昌電子商行

1N60P

SMALLSIGNALSCHOTTKYDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者：深圳市福田區(qū)吉富昌電子商行

1N60P

SMALLSIGNALSCHOTTKYDIODES

FEATURES ?Metal-on-siliconjunction,majoritycarrierconduction ?Highcurrentcapability,Lowforwardvoltagedrop ?ExtremelylowreversecurrentIR ?Ultraspeedswitchingcharacteristics ?Smalltemperaturecoefficientofforwardcharacteristics ?Satisfactorywavedetectionefficiency

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合明輝電子山東星合明輝電子有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

1N60P

SILICONSCHOTTKYBARRIERDIODE

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

1N60P

1.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友順友順科技股份有限公司

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一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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更多1N60L-B供應(yīng)商 更新時(shí)間2025-1-7 14:10:00

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