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1N6631分立半導體產品的二極管-整流器-單規(guī)格書PDF中文資料

1N6631
廠商型號

1N6631

參數屬性

1N6631 封裝/外殼為A,軸向;包裝為散裝;類別為分立半導體產品的二極管-整流器-單;產品描述:DIODE GEN PURP 1.1KV 1.4A AXIAL

功能描述

ULTRA FAST RECTIFIERS

封裝外殼

A,軸向

文件大小

100.26 Kbytes

頁面數量

2

生產廠商 Microsemi Corporation
企業(yè)簡稱

Microsemi美高森美

中文名稱

美高森美公司官網

原廠標識
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-14 17:57:00

1N6631規(guī)格書詳情

DESCRIPTION

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6626US thru 1N6631US).

FEATURES

? Popular JEDEC registered 1N6626 to 1N6631 series

? Voidless hermetically sealed glass package

? Extremely robust construction

? Triple-layer passivation

? Internal “Category I” Metallurgical bonds

? JAN, JANTX, and JANTXV available per MIL-PRF- 19500/590

? Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e.g. SP6626, SP6629, etc.

? Surface mount equivalents also available in a square endcap MELF configuration with “US” suffix (see separate data sheet for 1N6626US thru 1N6631US)

APPLICATIONS / BENEFITS

? Ultrafast recovery rectifier series 200 to 1000 V

? Military and other high-reliability applications

? Switching power supplies or other applications requiring extremely fast switching & low forward loss

? High forward surge current capability

? Low thermal resistance

? Controlled avalanche with peak reverse power capability

? Inherently radiation hard as described in Microsemi MicroNote 050

產品屬性

  • 產品編號:

    1N6631

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導體產品 > 二極管 - 整流器 - 單

  • 包裝:

    散裝

  • 二極管類型:

    標準

  • 電流 - 平均整流 (Io):

    1.4A

  • 速度:

    快速恢復 =< 500ns,> 200mA(Io)

  • 不同?Vr、F 時電容:

    40pF @ 10V,1MHz

  • 安裝類型:

    通孔

  • 封裝/外殼:

    A,軸向

  • 工作溫度 - 結:

    -65°C ~ 150°C

  • 描述:

    DIODE GEN PURP 1.1KV 1.4A AXIAL

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