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1SS184

SURFACEMOUNTFASTSWITCHINGDIODE

DualDiodeCommonCathode FastSwitching SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1SS184

SiliconEpitaxialPlanarSwitchingDiode

Features ?Smallpackage ?Lowforwardvoltage ?Fastreverserecoverytime ?Smalltotalcapacitance

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

1SS184

SWITCHINGDIODESULTRAHIGHSPEEDSWITCHING

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

1SS184

SwitchingDiodes

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1SS184

SwitchingDIODES

FEATURES ?Lowforwardvoltage:VF(3)=0.9V(typ.) ?Fastreverserecoverytime:trr=1.6ns(typ.)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

1SS184

Plastic-EncapsulateDiodes

SWITCHINGDIODES FEATURES Lowforwardvoltage:VF(3)=0.9V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

1SS184

UltraHighSpeedSwitching

Featrues ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.) ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●RoHSproductforpackingcodesuffixG Halogenfreeproduct

WILLASWILLAS ELECTRONIC CORP

威倫威倫電子股份有限公司

1SS184

SwitchingDiode

FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime

ZHAOXINGWEI

Zhaoxingwei Electronics ., Ltd

1SS184

SwitchingDiode

SwitchingDiode FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

1SS184

SOT-23Plastic-EncapsulateDIODE

SOT-23Plastic-EncapsulateDIODE Features Powerdissipation PD:150mW(Tamb=25°C) ForwardCurrent IF:100mA ReverseVoltage VR:80V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

1SS184

SOT-23Plastic-EncapsulateDiodes

SwitchingDiodes Features ●Lowforwardvoltage ●Fastreverserecoverytime Applications ●Extremefastswitches

HDSEMIJiangsu High diode Semiconductor Co., Ltd

蘇海德半導體蘇海德半導體有限公司

1SS184

SwitchingDiodes

Features ◇Lowforwardvoltage:VF(3)=0.9V(typ.) ◇Fastreverserecoverytime:trr=1.6ns(typ.)

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1SS184

Surfacemountswitchingdiode

FEATURES ●Lowforwardvoltage VF(3)=0.9V(typ). ●Fastswitching. ●Fastreverserecoverytime:trr=1.6ns(typ) APPLICATIONS ●Highspeedswitchingapplication.

DSK

Diode Semiconductor Korea

1SS184

SOT-23Plastic-EncapsulateDiodes

SWITCHINGDIODE FEATURES Powerdissipation PD:150mW(Tamb=25℃) ForwardCurrent IF:100mA ReverseVoltage VR:80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KISEMICONDUCTORKwang Myoung I.S. CO.,LTD

明陽國際貿(mào)易廣州市明陽國際貿(mào)易有限公司

1SS184

Surfacemountswitchingdiode

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

1SS184

SMALLSIGNALSWITCHINGDIODE

FEATURES ?Smallpackage ?Lowforwardvoltage ?Smalltotalcapacitance ?Fastreverserecoverytime

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟南晶恒電子有限責任公司

1SS184

100mASurfaceMountSwitchingDiode

Features ●Lowforwardvoltage VF(3)=0.9V(typ). ●Fastswitching. ●Fastreverserecoverytime:trr=1.6ns(typ)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

1SS184

SWITCHINGDIODES

SWITCHINGDIODES FEATURES Lowforwardvoltage:VF(3)=0.9V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.)

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半導體美科半導體股份(香港)有限公司

1SS184

Surfacemountswitchingdiode

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

1SS184

SwitchingDiode

Features ●SmallPackage ●Lowforwardvoltage:VF(3)=0.9V(Typ.) ●FastReverseRecoveryTime:trr=1.6ns(Typ.) ●SmallTotalCapacitance:CT=0.9pF(Typ.)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

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2022
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CJ/長電
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更多1SS184TP供應商 更新時間2025-1-8 14:32:00