20N60A4D中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

The HGTG20N60A4D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. This device has the high input impedance of a MOSFET

and the low on?state conduction loss of a bipolar transistor. The much

lower on?state voltage drop varies only moderately between 25°C and

150°C. The IGBT used is the development type TA49339. The diode

used in anti?parallel is the development type TA49372.

This IGBT is ideal for many high voltage switching applications

operating at high frequencies where low conduction losses are

essential. This device has been optimized for high frequency switch

mode power supplies. Formerly Developmental Type TA49341.

Features

? >100 kHz Operation 390 V, 20 A

? 200 kHz Operation 390 V, 12 A

? 600 V Switching SOA Capability

? Typical Fall Time 55 ns at TJ = 125°C

? Low Conduction Loss

? Temperature Compensating Saber? Model

? This is a Pb?Free Device