20N6S2D中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

General Description

The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS).

These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.

SMPS II LGC devices have been specially designed for:

? Power Factor Correction (PFC) circuits

? Full bridge topologies

? Half bridge topologies

? Push-Pull circuits

? Uninterruptible power supplies

? Zero voltage and zero current switching circuits

Features

? 100kHz Operation at 390V, 7A

? 200kHZ Operation at 390V, 5A

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC

? Low Gate Charge . . . . . . . . . 30nC at VGE = 15V

? Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

? UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ

? Low Conduction Loss

? Low Eon

? Soft Recovery Diode