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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
22N055	文件：960.33 Kbytes Page：7 Pages	N-Channel 60 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
NP22N055HHE	文件：960.11 Kbytes Page：7 Pages	N-Channel60V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSupply -SecondarySynchronousRectification ?DC/DCConverter	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
NP22N055HHE	文件：84.08 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39m?MAX.(VGS=10V,ID=11A) ?LowCiss:Ciss=590pFTYP. ?Built-in	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP22N055HHE	文件：295.45 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) ?LowC	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP22N055HHE	文件：316.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP22N055HLE	文件：316.43 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP22N055HLE	文件：297.3 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP22N055HLE	文件：961.02 Kbytes Page：7 Pages	N-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
NP22N055IHE	文件：84.08 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39m?MAX.(VGS=10V,ID=11A) ?LowCiss:Ciss=590pFTYP. ?Built-in	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP22N055IHE	文件：298.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP22N055IHE	文件：295.45 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) ?LowC	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP22N055ILE	文件：297.3 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP22N055ILE	文件：298.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP22N055SHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP22N055SHE	文件：295.45 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) ?LowC	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP22N055SHE	文件：298.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP22N055SLE	文件：298.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP22N055SLE	文件：297.3 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP22N055SLE	文件：897.27 Kbytes Page：6 Pages	N-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
NP22N055SLE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
瀚佳科技(深圳)有限公司	22N055		24+	TO252	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	22N055	I	23+	TO-251	10000	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	22N055	NEC	23+	TO252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	22N055	I	22+	TO-251	6000	十年配單,只做原裝	詢價(jià)
深圳市匯萊威科技有限公司	22N055		NEC	TO252	608900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)
深圳市得捷芯城科技有限公司	22N055	NEC	23+	NA/	130	優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	22N055	I	22+	TO-251	25000	只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單	詢價(jià)
深圳市宏捷佳電子科技有限公司	22N055	I	24+	TO-251	12300	獨(dú)立分銷(xiāo)商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市一線半導(dǎo)體有限公司	22N2	PHILIPS	24+	QFN16	224		詢價(jià)
深圳市維爾達(dá)電子有限公司	22N20	utc	2023+	TO-252	80000	一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)

更多22N055供應(yīng)商更新時(shí)間2025-1-14 10:14:00

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