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IRFP22N50APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N50APBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)max=0.23廓,ID=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCur

IRF

International Rectifier

IRP22N50A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRP22N50APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFH22N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH22N50P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXFV22N50P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXFV22N50PS

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXGH22N50B

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features ?InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on

IXYS

IXYS Corporation

IXGH22N50BS

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features ?InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on

IXYS

IXYS Corporation

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1798
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120
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更多22N50供應(yīng)商 更新時(shí)間2025-4-16 16:11:00