首頁 >22V10D-15LJ>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導(dǎo)體公司 | Lattice |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
LATTI |
2122+ |
PLCC |
9880 |
全新原裝正品現(xiàn)貨,優(yōu)勢渠道可含稅,假一賠十 |
詢價(jià) | ||
LATTI |
1034 |
PLCC |
8 |
詢價(jià) | |||
AMD |
24+ |
PLCC |
2400 |
詢價(jià) | |||
AMD |
17+ |
PLCC28 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
AMD |
2022 |
DIP |
9008 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
AMD |
23+ |
DIP |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價(jià) | ||
AMD |
23+24 |
DIP- |
9680 |
原盒原標(biāo).進(jìn)口原裝.支持實(shí)單 .價(jià)格優(yōu)勢 |
詢價(jià) | ||
PALCE |
23+ |
PLCC |
8890 |
價(jià)格優(yōu)勢、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢 |
詢價(jià) | ||
PALCE |
21+ |
PLCC |
89 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
PALCE |
23+ |
839E93A |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
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