23LC512T-E/SN集成電路（IC）的存儲器規(guī)格書PDF中文資料

23LC512T-E/SN屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的23LC512T-E/SN存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The Microchip Technology Inc. 23A512/23LC512 are

512-Kbit Serial SRAM devices. The memory is

accessed via a simple Serial Peripheral Interface (SPI)

compatible serial bus. The bus signals required are a

clock input (SCK) plus separate data in (SI) and data

out (SO) lines. Access to the device is controlled

through a Chip Select (CS) input. Additionally, SDI

(Serial Dual Interface) and SQI (Serial Quad Interface)

is supported if your application needs faster data rates.

This device also supports unlimited reads and writes to

the memory array.

Features

? SPI-Compatible Bus Interface:

- 20 MHz Clock rate

- SPI/SDI/SQI mode

? Low-Power CMOS Technology:

- Read Current: 3 mA at 5.5V, 20 MHz

- Standby Current: 4 ?A at +85°C

? Unlimited Read and Write Cycles

? Zero Write Time

? 64K x 8-bit Organization:

- 32-byte page

? Byte, Page and Sequential mode for Reads and

Writes

? High Reliability

? Temperature Ranges Supported:

? RoHS Compliant

- Industrial (I): -40?C to +85?C

- Extended (E): -40?C to +125?C