24AA02E48T-I/SN集成電路（IC）的存儲器規(guī)格書PDF中文資料

24AA02E48T-I/SN屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產的24AA02E48T-I/SN存儲器存儲器是集成電路上用作數據存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The Microchip Technology Inc. 24AA02E48/24AA025E48/24AA02E64/24AA025E64 (24AA02XEXX) is a 2 Kbit Electrically Erasable PROM. The device is organized as two blocks of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with maximum standby currents of only 1 μA for I-Temp. and 5 μA for E-Temp., as well as a maximum active current of 1 mA. The 24AA02XEXX also has a page write capability for up to eight bytes of data (16 bytes on the 24AA025E48/24AA025E64). The 24AA02XEXX is available in the standard 8-pin SOIC, 5-lead SOT-23, and 6-lead SOT-23 packages.

Features

? Pre-Programmed Globally Unique, 48-bit or 64-bit Node Address

? Compatible with EUI-48? and EUI-64?

? Single Supply with Operation Down to 1.7V

? Low-Power CMOS Technology:

- Read current 1 mA, maximum

- Standby current: 1 μA, maximum (I-Temp.)

5 μA, maximum (E-Temp.)

? 2-Wire Serial Interface, I2C Compatible

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to Eliminate Ground Bounce

? 100 kHz and 400 kHz Clock Compatibility

? Page Write Time 3 ms, typical

? Self-Timed Erase/Write Cycle

? Page Write Buffer:

- 8-byte page (24AA02E48/24AA02E64)

- 16-byte page (24AA025E48/24AA025E64)

? ESD Protection >4,000V

? More than 1 Million Erase/Write Cycles

? Data Retention >200 Years

? Factory Programming Available

? Available Packages:

- 8-lead SOIC and 5-lead SOT-23 (24AA02E48/24AA02E64)

- 8-lead SOIC and 6-lead SOT-23 (24AA025E48/24AA025E64)

? RoHS Compliant

? Available for Extended Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C