24AA32AT-I/SN集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

24AA32AT-I/SN屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的24AA32AT-I/SN存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線(xiàn)、SPI、UFS、Xccela 總線(xiàn)和 1-線(xiàn)。

Description:

The Microchip Technology Inc. 24AA32A/24LC32A (24XX32A*) is a 32 Kbit Electrically Erasable PROM. The device is organized as a single block of 4K x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of only 1 ?A and 1 mA, respectively. It has been developed for advanced, lowpower applications such as personal communications or data acquisition. The 24XX32A also has a page write capability for up to 32 bytes of data. Functional address lines allow up to eight devices on the same bus, for up to 256 Kbits address space. The 24XX32A is available in the standard 8-pin PDIP, surface mount SOIC, SOIJ, TSSOP, DFN, TDFN and MSOP packages. The 24XX32A is also available in the 5-lead SOT-23 and Chip Scale packages.

Features:

? Single Supply with Operation down to 1.7V for?

24AA32A Devices, 2.5V for 24LC32A Devices

? Low-Power CMOS Technology:

- Active current 1 mA, typical

- Standby current 1 ?A, typical

? 2-Wire Serial Interface, I2C? Compatible

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to Eliminate Ground Bounce

? 100 kHz and 400 kHz Clock Compatibility

? Page Write Time 5 ms max.

? Self-Timed Erase/Write Cycle

? 32-Byte Page Write Buffer

? Hardware Write-Protect

? ESD Protection > 4,000V

? More than 1 Million Erase/Write Cycles

? Data Retention > 200 Years

? Factory Programming Available

? Packages Include 8-lead PDIP, SOIC, SOIJ,

TSSOP, X-Rotated TSSOP, MSOP, DFN, TDFN,

5-lead SOT-23 and Chip Scale

? Pb-Free and RoHS Compliant

? Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C