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24AA64FTESN中文資料微芯科技數(shù)據(jù)手冊PDF規(guī)格書

24AA64FTESN
廠商型號

24AA64FTESN

功能描述

64K I2C Serial EEPROM with Quarter-Array Write-Protect

文件大小

492.09 Kbytes

頁面數(shù)量

30

生產(chǎn)廠商 Microchip Technology
企業(yè)簡稱

Microchip微芯科技

中文名稱

微芯科技股份有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-17 22:59:00

24AA64FTESN規(guī)格書詳情

Description:

The Microchip Technology Inc. 24AA64F/24LC64F (24XX64F*) is a 64 Kbit Electrically Erasable PROM. The device is organized as a single block of 8K x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and read currents of only 1 μA and 400 μA, respectively. It has been developed for advanced, low power applications such as personal communications or data acquisition. The 24XX64F also has a page write capability for up to 32 bytes of data. Functional address lines allow up to eight devices on the same bus, for up to 512 Kbits address space. The 24XX64F is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, TDFN and MSOP packages. The 24XX64F is also available in the 5-lead SOT-23 package.

Features:

? Single-Supply with Operation down to 1.7V for 24AA64F devices, 2.5V for 24LC64F devices

? Low-Power CMOS Technology:

- Read current 400 μA, max.

- Standby current 1 μA, max. (I-temp)

? 2-Wire Serial Interface, I2C? Compatible

? Packages with 3 Address Pins are cascadable up to 8 Devices

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to Eliminate Ground Bounce

? 100 kHz and 400 kHz Clock Compatibility

? Page Write Time 5 ms, typical

? Self-timed Erase/Write Cycle

? 32-Byte Page Write Buffer

? Hardware Write-protect for 1/4 Array (1800h-1FFFh)

? ESD Protection > 4,000V

? More than 1 Million Erase/Write Cycles

? Data Retention > 200 Years

? Factory Programming Available

? Packages include 8-lead PDIP, SOIC, TSSOP, MSOP, TDFN, 5-lead SOT-23

? Pb-Free and RoHS Compliant

? Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C

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