25LC040AT-E/MS集成電路（IC）的存儲器規(guī)格書PDF中文資料

25LC040AT-E/MS屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的25LC040AT-E/MS存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 25XX040A* is a 4 Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.

Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

The 25XX040A is available in standard packages including 8-lead PDIP and SOIC, and advanced packages including 8-lead MSOP, 8-lead TSSOP and rotated TSSOP, 8-lead 2x3 DFN and TDFN, and 6-lead SOT-23.

Features:

? Max. Clock 10 MHz

? Low-Power CMOS Technology:

- Max. Write Current: 5 mA at 5.5V, 10 MHz

- Read Current: 5 mA at 5.5V, 10 MHz

- Standby Current: 5 ?A at 5.5V

? 512 x 8-Bit Organization

? Write Page mode (up to 16 bytes)

? Sequential Read

? Self-timed Erase and Write Cycles (5 ms max.)

? Block Write Protection:

- Protect none, 1/4, 1/2 or all of array

? Built-in Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

? High Reliability:

- Endurance: 1,000,000 Erase/Write cycles

- Data retention: >200 years

- ESD protection: >4000V

? Temperature Ranges Supported:

? Pb-Free and RoHS Compliant

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C