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27C04AT-20L

4K (512 x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C04AisaCMOS4Knon-volatileelectricallyErasableandProgrammableReadOnlyMemory(EEPROM).The28C04AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddata

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

27C04AT-20P

4K (512 x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C04AisaCMOS4Knon-volatileelectricallyErasableandProgrammableReadOnlyMemory(EEPROM).The28C04AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddata

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

27C04AT-25IL

4K (512 x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C04AisaCMOS4Knon-volatileelectricallyErasableandProgrammableReadOnlyMemory(EEPROM).The28C04AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddata

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

27C04AT-25IP

4K (512 x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C04AisaCMOS4Knon-volatileelectricallyErasableandProgrammableReadOnlyMemory(EEPROM).The28C04AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddata

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

27C04AT-25L

4K (512 x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C04AisaCMOS4Knon-volatileelectricallyErasableandProgrammableReadOnlyMemory(EEPROM).The28C04AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddata

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

27C04AT-25P

4K (512 x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C04AisaCMOS4Knon-volatileelectricallyErasableandProgrammableReadOnlyMemory(EEPROM).The28C04AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddata

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

27C080

8-Megabit 1M x 8 UV Erasable CMOS EPROM

Description TheAT27C080chipisalow-power,high-performance8,388,608-bitone-timeprogrammablereadonlymemory(OTPEPROM)organizedas1Mby8bits.TheAT27C080requiresonlyone5Vpowersupplyinnormalreadmodeoperation.Anybytecanbeaccessedinlessthan90ns,eliminatingthenee

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

27C1000-10

1M-BIT [128K x 8] CMOS EPROM

GENERALDESCRIPTION TheMX27C1000isa5Vonly,1M-bit,OneTimeProgrammableReadOnlyMemory.Itisorganizedas128Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏電子

27C1000-12

1M-BIT [128K x 8] CMOS EPROM

GENERALDESCRIPTION TheMX27C1000isa5Vonly,1M-bit,OneTimeProgrammableReadOnlyMemory.Itisorganizedas128Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏電子

27C1000-15

1M-BIT [128K x 8] CMOS EPROM

GENERALDESCRIPTION TheMX27C1000isa5Vonly,1M-bit,OneTimeProgrammableReadOnlyMemory.Itisorganizedas128Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏電子

詳細(xì)參數(shù)

  • 型號(hào)：

    27C

  • 制造商：

    MAXWELL

  • 制造商全稱：

    Maxwell Technologies

  • 功能描述：

    1 Megabit(128K x 8-Bit) - OTP EPROM

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NS
23+
PLCC
5000
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TI/德州儀器
23+
CDIP32
50000
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MOT
24+
TO252-2.5
4231
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MOT
02+
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1100
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MOT
02+
BGA
6000
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MOT
24+
TO252-2.5
6540
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MOTOROLA/摩托羅拉
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9600
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MOTOROLA
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90
現(xiàn)貨或發(fā)貨一天
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MOT
2023+環(huán)?，F(xiàn)貨
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3
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MOTOROLA/摩托羅拉
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8700
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更多27C供應(yīng)商 更新時(shí)間2025-4-22 16:24:00

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