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28F128L18中文資料NUMONYX數(shù)據(jù)手冊(cè)PDF規(guī)格書

28F128L18
廠商型號(hào)

28F128L18

功能描述

StrataFlash Wireless Memory

文件大小

1.70781 Mbytes

頁面數(shù)量

106

生產(chǎn)廠商 numonyx
企業(yè)簡(jiǎn)稱

NUMONYX

中文名稱

numonyx官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2024-11-16 22:59:00

28F128L18規(guī)格書詳情

The Numonyx? StrataFlash? Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage.

■ High performance Read-While-Write/Erase

— 85 ns initial access

— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ)

— 1.8 V low-power buffered programming at 7 μs/byte (Typ)

■ Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 128-Mbit devices

— Multiple 16-Mbit partitions: 256-Mbit devices

— Four 16-Kword parameter blocks: top or bottom configurations

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)

— Status Register for partition and device status

■ Power

— VCC (core) = 1.7 V - 2.0 V

— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V

— Standby current: 30 μA (Typ) for 256-Mbit

— 4-Word synchronous read current: 15 mA (Typ) at 54 MHz

— Automatic Power Savings mode

■ Security

— OTP space: 64 unique factory device identifier bits; 64 user-programmable OTP bits; Additional 2048 user-programmable OTP bits

— Absolute write protection: VPP = GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 μs (Typ) program suspend

— 20 μs (Typ) erase suspend

— Numonyx? Flash Data Integrator optimized

— Basic Command Set (BCS) and Extended Command Set (ECS) compatible

— Common Flash Interface (CFI) capable

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— Intel ETOX* VIII process technology (0.13 μm)

■ Density and Packaging

— 128- and 256-Mbit density in VF BGA packages

— 128/0 and 256/0 density in SCSP

— 16-bit wide data bus

產(chǎn)品屬性

  • 型號(hào):

    28F128L18

  • 制造商:

    INTEL

  • 制造商全稱:

    Intel Corporation

  • 功能描述:

    StrataFlash Wireless Memory

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
INTEL/英特爾
23+
NA/
3585
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
INTEL
2016+
BGA
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
INTEL
23+
BGA
20000
全新原裝假一賠十
詢價(jià)
INTEL/英特爾
24+
BGA
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
INTEL
21+
BGA
35200
一級(jí)代理/放心采購
詢價(jià)
INTEL
24+
BGA
587
詢價(jià)
INTEL
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
N/A
2406+
BGA
1850
誠(chéng)信經(jīng)營(yíng)!進(jìn)口原裝!量大價(jià)優(yōu)!
詢價(jià)
INTEL
23+
BGA
5000
原裝正品,假一罰十
詢價(jià)
INTEL/英特爾
23+
BGA
3000
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詢價(jià)