28F800F3中文資料英特爾數(shù)據(jù)手冊(cè)PDF規(guī)格書

INTRODUCTION

This datasheet contains 8- and 16-Mbit Fast Boot Block memory information. Section 1.0 provides a flash memory overview. Sections 2.0 through 8.0 describe the memory functionality and electrical specifications for extended and automotive temperature product offerings.

■ High Performance

- 54 MHz Effective Zero Wait-State Performance

- Synchronous Burst-Mode Reads

- Asynchronous Page-Mode Reads

■ SmartVoltage Technology

- 2.7 V?3.6 V Read and Write Operations for Low Power Designs

- 12 V VPP Fast Factory Programming

■ Flexible I/O Voltage

- 1.65 V I/O Reduces Overall System Power Consumption

- 5 V-Safe I/O Enables Interfacing to 5 V Devices

■ Enhanced Data Protection

- Absolute Write Protection with VPP = GND

- Block Locking

- Block Erase/Program Lockout during Power Transitions

■ Density Upgrade Path

- 8- and 16-Mbit

■ Manufactured on ETOX? V Flash Technology

■ Supports Code Plus Data Storage

- Optimized for Flash Data Integrator (FDI) Software

- Fast Program Suspend Capability

- Fast Erase Suspend Capability

■ Flexible Blocking Architecture

- Eight 4-Kword Blocks for Data

- 32-Kword Main Blocks for Code

- Top or Bottom Configurations Available

■ Extended Cycling Capability

- Minimum 10,000 Block Erase Cycles Guaranteed

■ Low Power Consumption

- Automatic Power Savings Mode Decreases Power Consumption

■ Automated Program and Block Erase Algorithms

- Command User Interface for Automation

- Status Register for System Feedback

■ Industry-Standard Packaging

- 56-Lead SSOP

- μBGA* CSP