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AM29F400AB

4Megabit(524,288x8-Bit/262,144x16-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F400Aisa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.The4Mbitsofdataisdividedinto11sectorsofone16Kbyte,two8Kbyte,one32Kbyte,andseven64Kbytes,forflexibleerasecapability.The8bits

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM29F400AT

4Megabit(524,288x8-Bit/262,144x16-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F400Aisa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.The4Mbitsofdataisdividedinto11sectorsofone16Kbyte,two8Kbyte,one32Kbyte,andseven64Kbytes,forflexibleerasecapability.The8bits

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM29F400B

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM29F400B

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM29F400B

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS5.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29F400Bisa4Mbit,5.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. Thedeviceisofferedin44-pinSOand48-pinTSOPpackages.ThedeviceisalsoavailableinKnownGoodDie(KGD)form.Formoreinformation,refertopublicationnumber21258

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM29F400T

AM29F400T

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BM29F400B

4MEGABIT(512Kx8/256Kx16)5VOLTSECTORERASECMOSFLASHMEMORY

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BM29F400T

4MEGABIT(512Kx8/256Kx16)5VOLTSECTORERASECMOSFLASHMEMORY

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

HY29F400

4Megabit(512Kx8/256Kx16)5Volt-onlyFlashMemory

GENERALDESCRIPTION TheHY29F400isa4Megabit,5voltonlyCMOSFlashmemoryorganizedas524,288(512K)bytesor262,144(256K)words.Thedeviceisofferedinindustry-standard44-pinPSOPand48-pinTSOPpackages. KEYFEATURES ■5VoltRead,Program,andErase –Minimizessystem-level

HynixHynix Semiconductor

海力士海力士半導體

HY29F400A

4Megabit(512Kx8/256Kx16)5Volt-onlyFlashMemory

GENERALDESCRIPTION TheHY29F400Aisa4Megabit,5voltonlyCMOSFlashmemoryorganizedas524,288(512K)bytesor262,144(256K)words.Thedeviceisofferedinindustry-standard44-pinPSOPand48-pinTSOPpackages. KEYFEATURES ■5VoltRead,Program,andErase –Minimizessystem-leve

HynixHynix Semiconductor

海力士海力士半導體

M29F400

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29F400

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29F400B

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29F400BB

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29F400BB

4Mbit(512Kbx8or256Kbx16,BootBlock)singlesupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29F400BT

4Mbit(512Kbx8or256Kbx16,BootBlock)singlesupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29F400BT

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29F400T

4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MBM29F400TC

FLASHMEMORYCMOS4M(512Kx8/256Kx16)BIT

■DESCRIPTION TheMBM29F400TC/BCisa4M-bit,5.0V-onlyFlashmemoryorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheMBM29F400TC/BCisofferedina48-pinTSOPand44-pinSOPpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VV

spansionSPANSION

飛索飛索半導體

MBM29F400TC

4M(512KX8/256KX16)BIT

■GENERALDESCRIPTION TheMBM29F400TC/BCisa4M-bit,5.0V-onlyFlashmemoryorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheMBM29F400TC/BCisofferedina48-pinTSOPand44-pinSOPpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5

FujitsuFujitsu Component Limited.

富士通富士通株式會社

供應商型號品牌批號封裝庫存備注價格
FUJ
2022
SOP
1995
全新原裝現(xiàn)貨
 詢價
FUJ
23+24
SOP-
9680
原盒原標.進口原裝.支持實單 .價格優(yōu)勢
 詢價
FUJITSU
16+
8
2500
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
進口原裝
23+
SOP
1003
全新原裝現(xiàn)貨
 詢價
FUJ
2020+
TSSOP28
2290
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
24+
SOP
3
詢價
富士通
23+
TSOP
20000
原廠原裝正品現(xiàn)貨
 詢價
FUJITSU
20+
TSOP
11520
特價全新原裝公司現(xiàn)貨
 詢價
富士通
2023+
TSOP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
FUJITSU
24+
8
35200
一級代理/放心采購
 詢價
更多29F400BA供應商 更新時間2025-1-18 10:02:00

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