2ED1321S12M中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

Features

? Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

Floating

channel designed for bootstrap operation

? Maximum bootstrap voltage (VB node) of + 1225 V

? Operating voltages (VS node) upto + 1200 V

? Negative VS transient voltage immunity of 100 V

With

repetive 700 ns pulses

? 2.3 A / 4.6 A peak output source / sink current capability

? Integrated ultra-fast over-current protection (OCP)

±

5% high accuracy reference threshold

Less

than 1 us over-current sens to output shutdown

? Integrated ultra-fast, low resistance bootstrap diode

? Integrated dead-time and shoot-through prevention logic(2ED1322S12M)

? Enable, Fault, and programmable Fault clear RFE input

? Logic operational up to –8 V on VS Pin

? Independent per channel undervoltage lockout (UVLO)

? 25 V VCC supply voltage (maximum)

? Separate Logic (VSS) and output ground (COM)

? Greater than 5 mm clearance / creepage

? 2 kV HBM ESD capability