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2ED1322S12M中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

2ED1322S12M
廠商型號(hào)

2ED1322S12M

功能描述

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

文件大小

1.10102 Mbytes

頁(yè)面數(shù)量

34 頁(yè)

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡(jiǎn)稱(chēng)

Infineon英飛凌

中文名稱(chēng)

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-29 20:00:00

2ED1322S12M規(guī)格書(shū)詳情

Features

? Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

Floating

channel designed for bootstrap operation

? Maximum bootstrap voltage (VB node) of + 1225 V

? Operating voltages (VS node) upto + 1200 V

? Negative VS transient voltage immunity of 100 V

With

repetitive 700 ns pulses

? 2.3 A / 2.3 A peak output source / sink current capability

? Integrated ultra-fast over-current protection (OCP)

±

5% high accuracy reference threshold

Less

than 1 us over-current sense to output shutdown

? Integrated Active Miller Clamp (AMC) with 2 A sink current capability

? Integrated Short Circuit Clamp (SCC) function

? Integrated ultra-fast, low resistance bootstrap diode

? Integrated dead-time and shoot-through prevention logic (2ED1324S12P)

? Enable, Fault, and programmable Fault clear RFE input

? Logic operational up to –8 V on VS Pin

? Independent per channel undervoltage lockout (UVLO)

? 25 V VCC supply voltage (maximum)

? Separate Logic (VSS) and output ground (COM)

? Greater than 5 mm clearance / creepage

? 2 kV HBM ESD capability

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
Infineon(英飛凌)
23+
NA/
8735
原廠直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持!
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Infineon(英飛凌)
23+
SOP8
6000
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Infineon(英飛凌)
23+
NA
7000
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Infineon/英飛凌
21+
PG-DSO-14
6000
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Infineon(英飛凌)
23+
標(biāo)準(zhǔn)封裝
7000
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Infineon(英飛凌)
22+
標(biāo)準(zhǔn)封裝
7000
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TI
24+
SMD
5
C33-外殼
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Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
7000
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INFINEON
2023
NA
2580
原廠代理渠道,正品保障
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INFINEON
24+
con
10000
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