2ED3140MC12L中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Features

? Dual-channel isolated gate driver

? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs

? Up to 6.5 A typical peak output current

? 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew)

? 35 V absolute maximum output supply voltage

? High common-mode transient immunity CMTI > 200 kV/μs

? Active shutdown and short circuit clamping

? Galvanically isolated coreless transformer gate driver

? 3.3 V and 5 V input supply voltage

? 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance

? Safety certification

- UL 1577 (File 311313) with VISO,test = 6840 V (rms) for 1 s, VISO = 5700 V (rms) for 60 s

- Reinforced insulation according to IEC 60747-17 (planned) with VIORM = 1767 V (peak)