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2N2907AU

General Purpose Transistor

GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC-323/SC?70packagewhichisdesignedforlowpowersurfacemountapplications. Features ?WedeclarethatthematerialofproductcompliancewithRoHSrequ

FS

First Silicon Co., Ltd

2N2907AUA

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N2907AUA

Surface Mount NPN General Purpose Transistor

Description: The2N2907AUA(TX,TXV)isahermeticallysealedceramicsurfacemountgeneralpurposeswitchingtransistor.Theminiaturefourpinceramicpackageisidealfordesignswhereboardspaceanddeviceweightareimportantdesignconsiderations.The“UA”suffixdenotesthe4terminallea

TTELECTT Electronics.

TT電子公司梯梯電子集成制造服務(wù)(蘇州)有限公司

2N2907AUB

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

Semicoa Semiconductor

2N2907AUB

Type 2N2907AUB Geometry 0600 Polarity PNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

Semicoa Semiconductor

2N2907AUB

Silicon PNP Transistor

Description SemicoaSemiconductorsoffers: ?ScreeningandprocessingperMIL-PRF-19500AppendixE ?JANlevel(2N2907AUBJ) ?JANTXlevel(2N2907AUBJX) ?JANTXVlevel(2N2907AUBJV) ?JANSlevel(2N2907AUBJS) ?QCItotheapplicablelevel ?100dievisualinspectionperMIL-STD-750method2

Semicoa

Semicoa Semiconductor

2N2907AUB

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N2907AUB

Surface Mount PNP General Purpose Transistor

Description: The2N2907AUB,2N2907AUBTXand2N2907AUBTXVareminiature,hermeticallysealed,ceramicsurfacemountgeneralpurposeswitchingtransistors.TheminiaturethreepinceramicpackageisidealforupgradingcommercialgradecircuitstomilitaryreliabilitylevelswhereplasticSOT‐23de

TTELECTT Electronics.

TT電子公司梯梯電子集成制造服務(wù)(蘇州)有限公司

2N2907AUB_02

Silicon PNP Transistor

Description SemicoaSemiconductorsoffers: ?ScreeningandprocessingperMIL-PRF-19500AppendixE ?JANlevel(2N2907AUBJ) ?JANTXlevel(2N2907AUBJX) ?JANTXVlevel(2N2907AUBJV) ?JANSlevel(2N2907AUBJS) ?QCItotheapplicablelevel ?100dievisualinspectionperMIL-STD-750method2

Semicoa

Semicoa Semiconductor

2N2907AUB1

Rad-hard 60 V, 0.6 A PNP transistor

Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N2907AUBG

Rad-hard 60 V, 0.6 A PNP transistor

Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N2907AUBT

Rad-hard 60 V, 0.6 A PNP transistor

Features ?Hermeticpackages ?ESCCqualified ?100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N2907AUA

RADIATION HARDENED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N2907AUB

RADIATION HARDENED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N2907AUB0

Hi-Rel 60 V, 0.6 A PNP transistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N2907AUB0SW35

Hi-Rel 60 V, 0.6 A PNP transistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N2907AUBC

RADIATION HARDENED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N2907AUA

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:4-SMD,無引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP 60V 0.6A UA

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

2N2907AUA/TR

包裝:散裝 封裝/外殼:4-SMD,無引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP 60V 0.6A UA

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

2N2907AUB

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:3-SMD,無引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP 60V 0.6A UB

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    2N2907AU

  • 功能描述:

    兩極晶體管 - BJT PNP G.P. Transistor 4 Pin

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
N/A
82000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
LMSEMI/礪馬
24+
SOT89
30000
原裝現(xiàn)貨
詢價(jià)
Optek(TTElectronics)
5
全新原裝 貨期兩周
詢價(jià)
MICROSEMI
24+
SMD
1680
MICROSEMI專營品牌進(jìn)口原裝現(xiàn)貨假一賠十
詢價(jià)
MSC
專業(yè)軍工
NA
1000
只做原裝正品軍工級(jí)部分訂貨
詢價(jià)
MSCI
三年內(nèi)
1983
只做原裝正品
詢價(jià)
Optek (TT Electronics)
2022+
1
全新原裝 貨期兩周
詢價(jià)
MICROSEMI
2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
Microsemi
1942+
N/A
944
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詢價(jià)
MICROSEMI/美高森美
2021+
SMD
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價(jià)
更多2N2907AU供應(yīng)商 更新時(shí)間2024-12-27 11:06:00