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2N4231A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0.

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

2N4231A

Power Transistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N4231A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N4231A

POWER TRANSISTORS(5A,75W)

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0.

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

2N4231A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N4231A

Bipolar NPN Device in a Hermetically sealed TO66

SEME-LAB

Seme LAB

2N4231A

COMPLEMENTARY SILICON POWER TRANSISTORS

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N4231A_15

COMPLEMENTARY SILICON POWER TRANSISTORS

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N4231

iscSiliconNPNPowerTransistor

DESCRIPTION ?ExcellentSafeOperatingArea ?LowCollector-EmitterSaturationVoltage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation. APPLICATIONS ?Designedforgeneral-purposepoweramplifierandswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N4231

BipolarNPNDeviceinaHermeticallysealedTO66MetalPackage

SEME-LAB

Seme LAB

2N4231

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N4231

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0.

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

SF_2N4231

BipolarNPNDeviceinaHermeticallysealedTO66MetalPackage

SEME-LAB

Seme LAB

晶體管資料

  • 型號:

    2N4231A

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    5A

  • 最大工作頻率:

    >4MHZ

  • 引腳數(shù):

    2

  • 可代換的型號:

    BC243,BD539A,BD949,2N3054,3DD67B,

  • 最大耗散功率:

    75W

  • 放大倍數(shù):

  • 圖片代號:

    E-44

  • vtest:

    50

  • htest:

    4000100

  • atest:

    5

  • wtest:

    75

詳細(xì)參數(shù)

  • 型號:

    2N4231A

  • 制造商:

    SEME-LAB

  • 制造商全稱:

    Seme LAB

  • 功能描述:

    Bipolar NPN Device in a Hermetically sealed TO66

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
TO-66
10000
全新
詢價
BOCA
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
詢價
ISC/固電
23+
TO-66
4000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
詢價
MOTOROLA
24+
TO-39
1000
原裝現(xiàn)貨假一罰十
詢價
NES
15
全新原裝 貨期兩周
詢價
MOTOROLA
專業(yè)鐵帽
TO-39
1000
原裝鐵帽專營,代理渠道量大可訂貨
詢價
CENTRAL
21+
CAN3
61
原裝現(xiàn)貨假一賠十
詢價
CENTRAL
22+
CAN3
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
詢價
CHINA
22+
TO-3
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
詢價
更多2N4231A供應(yīng)商 更新時間2025-1-12 16:00:00