首頁 >2N5551TAR_Q>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR | CDIL Continental Device India Limited | CDIL | ||
TRANSISTOR(NPN) | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司 | WINNERJOIN | ||
SERIES2NTRANSISTORS SERIES2NTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
NPNEPITAXIALPLANARTRANSISTOR Description The2N5551isdesignedforamplifiertransistor. Features ?ComplementstoPNPType2N5401. ?HighCollector-EmitterBreakdownVoltage.VCEO>160V(@IC=1mA) | TGS Tiger Electronic Co.,Ltd | TGS | ||
NPNSiliconTransistor Descriptions ?Generalpurposeamplifier ?Highvoltageapplication Features ?Highcollectorbreakdownvoltage: VCBO=180V,VCEO=160V ?Lowcollectorsaturationvoltage: VCE(sat)=0.5V(MAX.) ?Complementarypairwith2N5401 | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團 | KODENSHI | ||
TO-92Plastic-EncapsulateTransistors Features ?Pb?FreePackagesareAvailable* ?DeviceMarking:DeviceType,e.g.,2N5550,DateCode | DAYADaya Electric Group Co., Ltd. 大亞電器集團大亞電器集團有限公司 | DAYA | ||
NPNSiliconGeneralPurposeTransistor FEATURES *Switchingandamplificationinhighvoltage *Lowcurrent(max.600mA) *Highvoltage(max.180v) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
mplifierTransistors(NPNSilicon) AmplifierTransistors NPNSilicon Features ?Pb?FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
GeneralPurposeSi-EpitaxialPlanarTransistors ?Powerdissipation625mW ?PlasticcaseTO-92 ?Weightapprox.0.18g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedinammopack | Diotec Diotec Semiconductor | Diotec | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeamplifierapplications. | DCCOM Dc Components | DCCOM | ||
SmallSignalHighVoltageTransistor(NPN) Features ?HighVoltageNPNTransistorforGeneralPurposeand TelephonyApplications | TAITRON TAITRON Components Incorporated | TAITRON | ||
HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
AmplifierTransistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
TO-92Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
NPNSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication) Descriptions ?Generalpurposeamplifier ?Highvoltageapplication Features ?Highcollectorbreakdownvoltage:VCBO=180V,VCEO=160V ?Lowcollectorsaturationvoltage:VCE(sat)=0.5V(MAX.) ?Complementarypairwith2N5401 | AUK AUK corp | AUK | ||
NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR HighVoltageNPNTransistorForGeneralPurposeAndTelephonyApplications. | bocaBoca Semiconductor Corporation 博卡博卡半導體公司 | boca | ||
TO-92PACKAGE | KECKEC CORPORATION KEC株式會社 | KEC | ||
AmplifierTransistors Features ?Pb?FreePackagesareAvailable* ?DeviceMarking:DeviceType,e.g.,2N5550,DateCode | DAYADaya Electric Group Co., Ltd. 大亞電器集團大亞電器集團有限公司 | DAYA | ||
NPNGeneralPurposeAmplifierTransistor Features ?Thisdeviceisdesignedforgeneralpurposehighvoltageamplifiersandgasdischargedisplaydrivers. ?CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLrating1 ?Marking:Typenumber ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesCo | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
SmallSignalTransistorsTO-92Case(Continued) DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美國中央半導體 | Central |
詳細參數
- 型號:
2N5551TAR_Q
- 功能描述:
兩極晶體管 - BJT NPN Transistor General Purpose
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2122+ |
NA |
60000 |
全新原裝正品現(xiàn)貨,假一賠十 |
詢價 | ||
FAIRCHILD/仙童 |
92 |
09 |
333 |
詢價 | |||
ONSemiconductor |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
FSC/ON |
23+ |
原包裝原封□□ |
1868 |
原裝進口特價供應QQ1304306553更多詳細咨詢庫存 |
詢價 | ||
原廠 |
2020+ |
8000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | |||
三年內 |
1983 |
只做原裝正品 |
詢價 | ||||
ON |
20+ |
SMD |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 | ||
ON/安森美 |
24+ |
SMD |
18000 |
原裝現(xiàn)貨 |
詢價 | ||
FAIRCHILDONSEMICONDUCTOR |
23+ |
NA |
12730 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
Fairchild |
1930+ |
N/A |
19953 |
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詢價 |
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