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2N5686

POWER TRANSISTORS(50A,300W)

HIGH-CURRENTCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications. ?ContinuousCollectorCurrent–IC=50A ?PowerDissipation–PD=300W@TC=25°C ?DCCurrentGain–hFE=15–60@IC=25A

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

2N5686

High-Current Complementary Silicon Power Transistors

Thesepackagesaredesignedforuseinhigh-poweramplifierandswitchingcircuitapplications. Features ?HighCurrentCapability-ICContinuous=50Amperes ?DCCurrentGain-hFE=15-60@IC=25Adc ?LowCollector-EmitterSaturationVoltage-VCE(sat)=1.0Vdc(Max)@IC=25Adc ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N5686

NPN POWER SILICON TRANSISTOR

NPNPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/464

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N5686

Power Transistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分類制造商

2N5686

High-Current Complementary Silicon Power Transistors

Thesepackagesaredesignedforuseinhigh-poweramplifierandswitchingcircuitapplications. Features ?HighCurrentCapability-ICContinuous=50Amperes ?DCCurrentGain-hFE=15-60@IC=25Adc ?LowCollector-EmitterSaturationVoltage-VCE(sat)=1.0Vdc(Max)@IC=25Adc ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N5686

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENTCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications. ?HighCurrentCapability–ICContinuous=50Amperes. ?DCCurrentGain–hFE=15–60@IC=25Adc ?LowCollector–EmitterSaturationVoltage–VCE(sat)=

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N5686

SI NPN POWER BJT

HIGH-CURRENTCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications. ?HighCurrentCapability–ICContinuous=50Amperes. ?DCCurrentGain–hFE=15–60@IC=25Adc ?LowCollector–EmitterSaturationVoltage–VCE(sat)=

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N5686

isc Silicon NPN Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N5686

NPN POWER SILICON TRANSISTOR

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N5686

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N5686

包裝:散裝 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:NPN TRANSISTOR

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

2N5686G

High-Current Complementary Silicon Power Transistors

Thesepackagesaredesignedforuseinhigh-poweramplifierandswitchingcircuitapplications. Features ?HighCurrentCapability-ICContinuous=50Amperes ?DCCurrentGain-hFE=15-60@IC=25Adc ?LowCollector-EmitterSaturationVoltage-VCE(sat)=1.0Vdc(Max)@IC=25Adc ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N5686G

包裝:散裝 封裝/外殼:TO-204AE 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN 80V 50A TO204

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

晶體管資料

  • 型號:

    2N5686

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    50A

  • 最大工作頻率:

    >2MHZ

  • 引腳數(shù):

    2

  • 可代換的型號:

    2N5578,2N5579,2N5580,

  • 最大耗散功率:

    300W

  • 放大倍數(shù):

  • 圖片代號:

    E-44

  • vtest:

    80

  • htest:

    2000100

  • atest:

    50

  • wtest:

    300

產(chǎn)品屬性

  • 產(chǎn)品編號:

    2N5686

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    散裝

  • 描述:

    NPN TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
詢價
MOT
24+
TO-3
102
詢價
MOTOROLA
1984+
23
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
MOTOROLA
23+
TO3
7635
全新原裝優(yōu)勢
詢價
MOT
23+
TO-3
5000
原裝正品,假一罰十
詢價
MOT/ON
16+
TO-3
550
原裝現(xiàn)貨假一罰十
詢價
ON
1725+
TO-3
3256
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
MOT/ON
專業(yè)鐵帽
TO-3
550
原裝鐵帽專營,代理渠道量大可訂貨
詢價
三年內(nèi)
1983
只做原裝正品
詢價
ON丨安森美
20+
TO-3
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
更多2N5686供應(yīng)商 更新時間2024-12-23 17:06:00