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2N6058

POWER TRANSISTORS(12A,150W)

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain-

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

2N6058

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DarlingtonComplementarySiliconPowerTransistors ...designedforgeneral?purposeamplifierandlowfrequencyswitchingapplications. ?HighDCCurrentGain— hFE=3500(Typ)@IC=5.0Adc ?Collector?EmitterSustainingVoltage—@100mA VCEO(sus)=80Vdc(Min)—2N6058

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6058

NPN DARLINGTON POWER SILICON TRANSISTOR

NPNDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/502

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N6058

Power Transistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分類制造商

2N6058

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3package ·Highgain ·Highcurrent ·Highdissipation ·Complementtotype2N5883/2N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandlowfrequencyswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2N6058

POWER COMPLEMENTARY SILICON TRANSISTORS

POWERCOMPLEMENTARYSILICONTRANSISTORS The2N6050,2N6051and2N6052aresiliconepitaxial-basetransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase. Theyareintededforuseinpowerlinearandlowfrequencyswitchingapplications. ThecomplementaryNPNtypesar

COMSET

Comset Semiconductor

2N6058

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

2N6058

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3package ·Highcurrent;highdissipation ·DARLINGTON ·Complementtotype2N5883;2N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandlowfrequencyswitchingapplications

SAVANTIC

Savantic, Inc.

2N6058

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain-

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6058

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6050,2N6057seriestypesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighgainamplifierandswitchingapplications.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N6058

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain-

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6058

COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain-

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6058

Silicon NPN Power Transistor

DESCRIPTION ·Built-inBase-EmitterShuntResistors ·HighDCcurrentgainhFE =750(Min)@IC=6A ·Collector-EmitterSustainingVoltage- VCEO(SUS)=80V(Min) ·Complementtotype2N6051 APPLICATIONS ·Designedforgeneralpurposeamplifierandlowfrequency switchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N6058

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

2N6058

Silicon NPN Power Transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2N6058

POWER COMPLEMENTARY SILICON TRANSISTORS

COMSET

Comset Semiconductor

2N6058

Bipolar NPN Device in a Hermetically sealed TO3

SEME-LAB

Seme LAB

2N6058

Darlington Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6058

Silicon NPN Power Transistors

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N6058

Darlington Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

晶體管資料

  • 型號:

    2N6058

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    12A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

    BDV67A,BDW83B,BDX65A,BDX67A,BDX87B,FH9C,MJ4034,TIP641,

  • 最大耗散功率:

    150W

  • 放大倍數(shù):

    β>750

  • 圖片代號:

    E-44

  • vtest:

    80

  • htest:

    999900

  • atest:

    12

  • wtest:

    150

產(chǎn)品屬性

  • 產(chǎn)品編號:

    2N6058

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    散裝

  • 描述:

    PNP POWER TRANSISTOR SILICON AMP

供應(yīng)商型號品牌批號封裝庫存備注價格
CESE
23+
TO-03
66800
原廠授權(quán)一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力!
詢價
ST
2024
TO-3
13500
16余年資質(zhì) 絕對原盒原盤代理渠道 更多數(shù)量
詢價
24+
TO-3
10000
全新
詢價
SCS
2016+
CAN
6528
只做原裝正品現(xiàn)貨!或訂貨!假一賠十!
詢價
MOTOROLA
24+
TO-3
1500
原裝現(xiàn)貨假一罰十
詢價
BOCA
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
ST
TO-3
6688
15
現(xiàn)貨庫存
詢價
CESE
18
TO-03
200
進口原裝正品優(yōu)勢供應(yīng)
詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
1500
原裝鐵帽專營,代理渠道量大可訂貨
詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
詢價
更多2N6058供應(yīng)商 更新時間2025-1-11 10:01:00