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2N6661中文資料SUTEX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

2N6661
廠商型號(hào)

2N6661
功能描述

N-Channel Enhancement-Mode Vertical DMOS FETs
文件大小

21.45 Kbytes
頁(yè)面數(shù)量

2 頁(yè)
生產(chǎn)廠商 Supertex, Inc
企業(yè)簡(jiǎn)稱

SUTEX

中文名稱

Supertex, Inc官網(wǎng)
原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載
更新時(shí)間

2025-1-10 16:50:00

2N6661規(guī)格書(shū)詳情

General Description

The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features

? Free from secondary breakdown

? Low power drive requirement

? Ease of paralleling

? Low C

? ISS and fast switching speeds

? Excellent thermal stability

? Integral Source-Drain diode

? High input impedance and high gain

? Complementary N- and P-Channel devices

Applications

? Motor controls

? Converters

? Amplifi ers

? Switches

? Power supply circuits

? Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

產(chǎn)品屬性

  • 型號(hào)：

    2N6661

  • 功能描述：

    MOSFET 90V 4Ohm

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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