首頁 >2N6758JANTX>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VGSRatedat?20V DESCRIPTION ?VGSRatedat±20V ?SiliconGateforfastswitchingspeeds ?IDSS、RDS(ON),specifiedatelevatedtemperature ?Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNELMOSFET N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-ChannelPowerMOSFETs,9A,150V/200V Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE) 200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag | IRF International Rectifier | IRF | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.40ohm,Id=9A) 200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE) 200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.40ohm,Id=9A) 200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
2N6758JANTX
- 制造商:
International Rectifier
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
N/A |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
N/A |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
N/A |
7000 |
詢價 | |||
IR |
21+ |
TO-3 |
94 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
IR |
21+ |
TO-3 |
8000 |
全新原裝 公司現(xiàn)貨 價格優(yōu) |
詢價 | ||
IR |
23+ |
TO-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
22+ |
TO-3 |
25000 |
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十 |
詢價 | ||
IR |
9516+ |
TO-3 |
94 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
NA/ |
3344 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IR/MOT |
24+ |
TO-3 |
850 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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