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2N70

2 Amps, 700 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC2N70isahighvoltageMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersupplies,P

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7000

CASE 29-04, STYLE 22 TO-92 (TO-226AA)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

2N7000

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

2N7000

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導體

2N7000

N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

2N7000

Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92

SmallSignalMOSFET200mAmps,60Volts N?ChannelTO?92 Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N7000

Logic N-Channel MOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5?)@VGS=10V RDS(on)(Max5.3?)@VGS=4.5V ■GateCharge(Typical

semiWell

SemiWell Semiconductor

2N7000

TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET

Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications.

DCCOM

Dc Components

2N7000

N-Channel Enhancement Mode Power Mos.FET

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7000

Small Signal MOSFET N-Channel

Features: *LowOn-Resistance:5Ω *LowInputCapacitance:60PF *LowOutputCapacitance:25PF *LowThreshole:1.4V(TYE) *FastSwitchingSpeed:10ns

WEITRON

Weitron Technology

2N7000

FIELD EFFECT TRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapability.

KECKEC CORPORATION

KEC株式會社

2N7000

N-Channel Enhancement Mode Field Effect Transistor

N-ChannelEnhancementModeFieldEffectTransistor ?Powerdissipation350mW ?PlasticcaseTO-92 ?Weightapprox.0.18g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedinammopack

Diotec

Diotec Semiconductor

2N7000

N-channel enhancement mode vertical D-MOS transistor

N-channelenhancementmodeverticalD-MOStransistorinaTO-92variantenvelope,intendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES 1.LowRDS(on) 2.DirectinterfacetoC-MOS,TTL,etc. 3.High-speedswitching 4.Nosecondarybreakdown.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

2N7000

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.

Calogic

Calogic, LLC

2N7000

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

2N7000

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

■DESCRIPTION TheUTC2N7000hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7000

N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

2N7000

N-Channel MOSFET

Features ?HighdensitycelldesignforlowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Marking:2N7000 ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2N7000

MOSFET (N-Channel)

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2N7000

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導體

晶體管資料

  • 型號:

    2N700(A,/18)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Ge-PNP

  • 性質:

    調幅 (AM)_調頻 (FM)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    25V

  • 最大電流允許值:

    0.05A

  • 最大工作頻率:

    800MHZ

  • 引腳數(shù):

    4

  • 可代換的型號:

    AF106,AF109R,AF139,AF239(S),AF306,2N3283,2N3284,2N3285,2N3286,

  • 最大耗散功率:

    0.075W

  • 放大倍數(shù):

  • 圖片代號:

    D-13

  • vtest:

    25

  • htest:

    800000000

  • atest:

    0.05

  • wtest:

    0.075

詳細參數(shù)

  • 型號:

    2N70

  • 制造商:

    UTC-IC

  • 制造商全稱:

    UTC-IC

  • 功能描述:

    2 Amps, 700 Volts N-CHANNEL POWER MOSFET

供應商型號品牌批號封裝庫存備注價格
ON/安森美
2410+
TO-220
15200
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
詢價
FSC
22+23+
TO-220
25565
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
ST
24+
TO252
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
IXYS/艾賽斯
23+
TO-247
69820
終端可以免費供樣,支持BOM配單!
詢價
U
23+
TO-220
10000
公司只做原裝正品
詢價
UTC/友順
2022+
TO-220F
7500
原廠代理 終端免費提供樣品
詢價
TH/韓國太虹
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
UTC/友順
2022+
TO-220
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
詢價
UTC/友順
20+
TO-220F
7500
現(xiàn)貨很近!原廠很遠!只做原裝
詢價
24+
N/A
69000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
更多2N70供應商 更新時間2025-1-12 16:12:00