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2N7000中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

2N7000
廠商型號

2N7000

功能描述

N-Channel Enhancement Mode Field Effect Transistor

絲印標識

2N7000

封裝外殼

TO-92

文件大小

372.34 Kbytes

頁面數(shù)量

13

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導體

中文名稱

安森美半導體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-26 11:46:00

人工找貨

2N7000價格和庫存,歡迎聯(lián)系客服免費人工找貨

2N7000規(guī)格書詳情

Description

These N?channel enhancement mode field effect transistors are

produced using onsemi’s proprietary, high cell density, DMOS

technology. These products have been designed to minimize on?state

resistance while providing rugged, reliable, and fast switching

performance. These products are particularly suited for low?voltage,

low?current applications, such as small servo motor control, power

MOSFET gate drivers, and other switching applications.

Features

? High Density Cell Design for Low RDS(on)

? Voltage Controlled Small Signal Switch

? Rugged and Reliable

? High Saturation Current Capability

? ESD Protection Level: HBM > 100 V, CDM > 2 kV

? This Device is Pb?Free and Halogen Free

產(chǎn)品屬性

  • 型號:

    2N7000

  • 功能描述:

    MOSFET N-CHANNEL 60V 200mA

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商 型號 品牌 批號 封裝 庫存 備注 價格
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