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2N7002W

60VN-ChannelEnhancementModeMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=5? ?RDS(ON),VGS@4.5V,IDS@75mA=7.5? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:Relays,Displays,Lamps,Solen

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002W

300mAmps,60VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2N7002W

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2N7002W

Plastic-EncapsulateMosfets

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage MechanicalData ?Case:SOT-323,MoldedPlastic ?Terminals:SolderableperMIL-STD-202,Method208 ?TerminalConnectio

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

2N7002W

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.34A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

揚州揚杰電子揚州揚杰電子科技股份有限公司

詳細參數(shù)

  • 型號：

    2N7002-TP

  • 功能描述：

    MOSFET 60V, 115mA

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Micro Commercial Co
24+
SOT-23
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
MCC(美微科)
24+
BGA
540010
自己庫存,有更多量
 詢價
MCC
1000
原裝正品+13925678267
 詢價
MCC/美微科
21+
SOT-23
60000
絕對原裝正品現(xiàn)貨,假一罰十
 詢價
MCC
23+
SOT-23
6800
原裝正品,支持實單
 詢價
MCCSEMI
24+
Tube
3699000
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
MCC
24+
SOT-23
10
原裝現(xiàn)貨17377264928微信同號
 詢價
MCC
24+
SOT-23
7500
詢價
MCC
23+
SOT-23
7750
全新原裝優(yōu)勢
 詢價
MICROCOMMERCIALCOMPONENT
23+
NA
997
專做原裝正品,假一罰百!
 詢價
更多2N7002-TP供應商 更新時間2025-3-13 19:06:00

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