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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
2N7002KTB	文件：117.39 Kbytes Page：5 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KTB	文件：158.48 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KTB_V01	文件：158.48 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KTB6	文件：150.91 Kbytes Page：5 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KTB_14	文件：270.89 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KU	文件：689.54 Kbytes Page：6 Pages	60VN-ChannelMOSFET Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva	Good-Ark GOOD-ARK Electronics	Good-Ark
2N7002KU	文件：642.66 Kbytes Page：7 Pages	AdvancedMOSFETprocesstechnology	SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司	SILIKRON
2N7002KU	文件：56.45 Kbytes Page：4 Pages	NChannelMOSFET	KECKEC CORPORATION KEC株式會(huì)社	KEC
2N7002KU	文件：370.33 Kbytes Page：4 Pages	NChannelMOSFET INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V.(HumanBodyModel) ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU	KECKEC CORPORATION KEC株式會(huì)社	KEC
2N7002KV	文件：425.76 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
2N7002KV	文件：1.1607 Mbytes Page：4 Pages	Plastic-EncapsulateMOSFETS FEATURE ?HighdensitycelldesignforLowRDS(on) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KW	文件：170.76 Kbytes Page：5 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KW	文件：533.04 Kbytes Page：4 Pages	N-ChSmallSignalMOSFETwithESDProtection FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N7002KW	文件：624.98 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)	YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司	YANGJIE
2N7002KW	文件：291.95 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
2N7002KW	文件：1.01269 Mbytes Page：8 Pages	N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
2N7002KW	文件：386.34 Kbytes Page：4 Pages	N-ChannelEnhancementMOSFET Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KW	文件：113.46 Kbytes Page：8 Pages	N-ChannelSMDMOSFETESDProtection Features ?RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A ?RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A ?ESDproduction2kV(Humanbodymode) ?Advancedtrenchprocesstechnology. ?Highdensitycelldesignforultralowon-resistance. ?Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr	FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司	FORMOSA
2N7002KW	文件：203.34 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEMOSFET DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES LowReverseTransferCapacitance ESDProtected *FastSwitchingCap	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC
2N7002KW	文件：1.12801 Mbytes Page：5 Pages	N-ChannelMOSFET N-ChannelMOSFET FEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司	JIANGSU

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市航宇科工半導(dǎo)體有限公司	2N7002KTB	PANJIT/強(qiáng)茂	22+	SOT523	600000	航宇科工半導(dǎo)體-央企優(yōu)秀戰(zhàn)略合作伙伴!	詢(xún)價(jià)
深圳市中福國(guó)際管理有限公司	2N7002KTB	PANJIT/強(qiáng)茂	23+	SOT-523	360000	專(zhuān)業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低	詢(xún)價(jià)
艾睿國(guó)際（香港）有限公司	2N7002KTB	PANJIT/ 強(qiáng)茂	2021+	SOT-523	100500	一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢(xún)價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	2N7002KTB	PANJIT	21+	SOT523	655	原裝現(xiàn)貨假一賠十	詢(xún)價(jià)
深圳市凌旭科技有限公司	2N7002KTB	PANJIT	21+	SOT523	1523	公司現(xiàn)貨,不止網(wǎng)上數(shù)量!原裝正品,假一賠十!	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	2N7002KTB	PANJIT/強(qiáng)茂	23+	SOT-523	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳廊盛科技有限公司	2N7002KTB	PANJIT/強(qiáng)茂	2022	SOT-523	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	2N7002KTB	PANJIT/ 強(qiáng)茂	22+	SOT-523	6000	十年配單,只做原裝	詢(xún)價(jià)
深圳市匯萊威科技有限公司	2N7002KTB		PANJIT	SOT-523	608900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢(xún)價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	2N7002KTB	PANJIT/強(qiáng)茂	23+	SOT-523	863000	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳	詢(xún)價(jià)

更多2N7002KTB供應(yīng)商更新時(shí)間2025-1-5 13:02:00

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