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2N7002TB

60VN-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=5? ?RDS(ON),VGS@4.5V,IDS@50mA=7.5? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Relays,Displays,Lamps,Solenoids,Memories,

PANJITPan Jit International Inc.

強茂股份有限公司

2N7002T-C

N-ChannelPlastic-EncapsulateMOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SECELECTRONICS

SEC Electronics Inc.

2N7002TE

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.29A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2N7002-TP

N-ChannelMOSFET

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF· ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?AdvancedTrenchProcessTechnology ?HighInputImpedance ?HighSpeedSwitching ?CMOSLogicCompatibleInput ?Marking:7002/S72 ··

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2N7002TPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION

CHENMKOchenmko

力勤股份有限公司

2N7002TQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002TQissuitablefo

DIODES

Diodes Incorporated

2N7002V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliabil

DIODES

Diodes Incorporated

2N7002V

N-ChannelEnhancementModeFieldEffectTransistor

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

2N7002V

N-ChannelMOSFET

Features ?Lowgatethresholdvoltage ?Lowinputcapacitance ?Lowon-resistance ?Lowinput/outputleakage ?Marking:KAS ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2N7002V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002V

MOSFET(N-Channel)

SOT-563Plastic-EncapsulateMOSFETS FEATURE ?DualN-channelMOSFET ?Lowon-resistance ?Lowgatethresholdvoltage ?Lowinputcapacitance ?Fastswitchingspeed ?Lowinput/outputleakage APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2N7002V

N-ChannelMOSFET

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2N7002V

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.115A RDS(ON)

RECTRON

Rectron Semiconductor

2N7002VA

N-ChannelEnhancementModeFieldEffectTransistor

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

2N7002VA

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002VAC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

2N7002VC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002VC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

2N7002VPT

DualN-ChannelEnhancementMOSFET

VOLTAGE60VoltsCURRENT0.280Ampere FEATURE *Smallsurfacemountingtype.(SOT-563) *HighdensitycelldesignforlowRDS(ON) *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Serv

CHENMKOchenmko

力勤股份有限公司

2N7002W

SmallSignalMOSFET

115mAMPS,60VOLTS,RDS(on)=7.5SmallSignalMOSFET N–ChannelSOT–323

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細參數(shù)

  • 型號:

    2N7002TA

  • 功能描述:

    MOSFET N Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
ZETEX
2016+
SOT23
9775
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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22+
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600000
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ZETEX
23+
SOT23
29600
一級分銷商!
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ZETEX
24+
SOT-23
9200
新進庫存/原裝
詢價
ZETEX
16+
原廠封裝
3000
原裝現(xiàn)貨假一罰十
詢價
ZETEX
2016+
SOT23
6523
只做進口原裝現(xiàn)貨!假一賠十!
詢價
ZETEX
24+
SOT-23
5810
只做原裝正品
詢價
ZETEX
24+
SOT-23
5000
只做原裝公司現(xiàn)貨
詢價
DIODES
21+
42664
12588
原裝正品假一罰十
詢價
ZETEX
22+
SOT-23
25274
原裝正品現(xiàn)貨,可開13個點稅
詢價
更多2N7002TA供應商 更新時間2025-1-2 18:28:00