2N7288H中文資料Intersil數據手冊PDF規(guī)格書

Description

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?.

Features

? 9A, 250V, RDS(on) = 0.415?

? Second Generation Rad Hard MOSFET Results From New Design Concepts

? Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

??? - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

??? - Performance Permits Limited Use to 3000KRAD(Si)

? Gamma Dot - Survives 3E9RAD(Si)/sec at 80 BVDSS Typically

??? - Survives 2E12 Typically If Current Limited to IDM

? Photo Current - 7.0nA Per-RAD(Si)/sec Typically

? Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2

??? - Usable to 1E14 Neutrons/cm2

? Single Event - Typically Survives 1E5ions/cm2 Having an LET ≤ 35MeV/mg/cm2 and a Range ≥ 30μm at 80 BVDSS